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The Development of III-V Semiconduct...

Greene, Andrew M.

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The Development of III-V Semiconductor MOSFETs for Future CMOS Applications.

Record Type:	Electronic resources : Monograph/item
Title/Author:	The Development of III-V Semiconductor MOSFETs for Future CMOS Applications./
Author:	Greene, Andrew M.
Description:	206 p.
Notes:	Source: Dissertation Abstracts International, Volume: 77-04(E), Section: B.
Contained By:	Dissertation Abstracts International77-04B(E).
Subject:	Nanoscience. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3738901
ISBN:	9781339294070

The Development of III-V Semiconductor MOSFETs for Future CMOS Applications.
Greene, Andrew M.

The Development of III-V Semiconductor MOSFETs for Future CMOS Applications. - 206 p.

Source: Dissertation Abstracts International, Volume: 77-04(E), Section: B.

Thesis (Ph.D.)--State University of New York at Albany, 2015.

Alternative channel materials with superior transport properties over conventional strained silicon are required for supply voltage scaling in low power complementary metal-oxide-semiconductor (CMOS) integrated circuits. Group III-V compound semiconductor systems offer a potential solution due to their high carrier mobility, low carrier effective mass and large injection velocity. The enhancement in transistor drive current at a lower overdrive voltage allows for the scaling of supply voltage while maintaining high switching performance. This thesis focuses on overcoming several material and processing challenges associated with III-V semiconductor development including a low thermal processing budget, high interface trap state density (Dit), low resistance source/drain contacts and growth on lattice mismatched substrates.

ISBN: 9781339294070Subjects--Topical Terms:

587832
Nanoscience.

The Development of III-V Semiconductor MOSFETs for Future CMOS Applications.
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245 1 4 $a The Development of III-V Semiconductor MOSFETs for Future CMOS Applications.
300 $a 206 p.
500 $a Source: Dissertation Abstracts International, Volume: 77-04(E), Section: B.
500 $a Adviser: Serge Oktyabrsky.
502 $a Thesis (Ph.D.)--State University of New York at Albany, 2015.
520 $a Alternative channel materials with superior transport properties over conventional strained silicon are required for supply voltage scaling in low power complementary metal-oxide-semiconductor (CMOS) integrated circuits. Group III-V compound semiconductor systems offer a potential solution due to their high carrier mobility, low carrier effective mass and large injection velocity. The enhancement in transistor drive current at a lower overdrive voltage allows for the scaling of supply voltage while maintaining high switching performance. This thesis focuses on overcoming several material and processing challenges associated with III-V semiconductor development including a low thermal processing budget, high interface trap state density (Dit), low resistance source/drain contacts and growth on lattice mismatched substrates.
520 $a Non-planar In0.53Ga0.47As FinFETs were developed using both "gate-first" and "gate-last" fabrication methods for n-channel MOSFETs. Electron beam lithography and anisotropic plasma etching processes were optimized to create highly scaled fins with near vertical sidewalls. Plasma damage was removed using a wet etch process and improvements in gate efficiency were characterized on MOS capacitor structures. A two-step, selective removal of the pre-grown n+ contact layer was developed for "gate-last" recess etching. The final In0.53Ga 0.47As FinFET devices demonstrated an ION = 70 mA/mm, I ON/IOFF ratio = 15,700 and sub-threshold swing = 210 mV/dec.
520 $a Bulk GaSb and strained In0.36Ga0.64Sb quantum well (QW) heterostructures were developed for p-channel MOSFETs. Dit was reduced to 2 - 3 x 1012 cm-2eV-1 using an InAs surface layer, (NH4)2S passivation and atomic layer deposition (ALD) of Al2O3. A self-aligned "gate-first" In0.36Ga0.64Sb MOSFET fabrication process was invented using a "T-shaped" electron beam resist patterning stack and intermetallic source/drain contacts. Ni contacts annealed at 300°C demonstrated an ION = 166 mA/mm, ION/IOFF ratio = 1,500 and sub-threshold swing = 340 mV/dec. Split C-V measurements were used to extract an effective channel mobility of muh* = 300 cm2/Vs at Ns = 2 x 1012 cm -2. "Gate-last" MOSFETs grown with an epitaxial p + contact layer were fabricated using selective gate-recess etching techniques. A parasitic "n-channel" limited ION/I OFF ratio and sub-threshold swing, most likely due to effects from the InAs surface layer.
590 $a School code: 0668.
650 4 $a Nanoscience. $3 587832
690 $a 0565
710 2 $a State University of New York at Albany. $b Nanoscale Science and Engineering-Nanoscale Science. $3 1685320
773 0 $t Dissertation Abstracts International $g 77-04B(E).
790 $a 0668
791 $a Ph.D.
792 $a 2015
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3738901