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Heterogeneous silicon photonics for ...

Xiong, Chi.

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Heterogeneous silicon photonics for chip-scale nonlinear optics and optomechanics.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Heterogeneous silicon photonics for chip-scale nonlinear optics and optomechanics./
作者:	Xiong, Chi.
面頁冊數:	154 p.
附註:	Source: Dissertation Abstracts International, Volume: 74-04(E), Section: B.
Contained By:	Dissertation Abstracts International74-04B(E).
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3535298
ISBN:	9781267853028

Heterogeneous silicon photonics for chip-scale nonlinear optics and optomechanics.
Xiong, Chi.

Heterogeneous silicon photonics for chip-scale nonlinear optics and optomechanics. - 154 p.

Source: Dissertation Abstracts International, Volume: 74-04(E), Section: B.

Thesis (Ph.D.)--Yale University, 2012.

This item is not available from ProQuest Dissertations & Theses.

Integrated photonic circuits based on silicon are poised to be the technological solutions for the next generation on-chip interconnect beyond copper wires. Silicon photonics holds immense promise for optical signal processing, on-chip optical networks, optical sensing and metrology. However, silicon is a semiconductor with a small indirect bandgap (1.1 eV) and limited to operational wavelengths above 1.1 mum. Even though the centrosymmetric crystal structure of silicon permits third order optical nonlinearity (chi (3)), it does not provide the preferred second order nonlinearity (chi(2)) which is exploited extensively in modern nonlinear and quantum optics as well as in important technological applications such as electro-optic modulation.

ISBN: 9781267853028Subjects--Topical Terms:

649834
Electrical engineering.

Heterogeneous silicon photonics for chip-scale nonlinear optics and optomechanics.
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245 1 0 $a Heterogeneous silicon photonics for chip-scale nonlinear optics and optomechanics.
300 $a 154 p.
500 $a Source: Dissertation Abstracts International, Volume: 74-04(E), Section: B.
500 $a Adviser: Hong X. Tang.
502 $a Thesis (Ph.D.)--Yale University, 2012.
506 $a This item is not available from ProQuest Dissertations & Theses.
520 $a Integrated photonic circuits based on silicon are poised to be the technological solutions for the next generation on-chip interconnect beyond copper wires. Silicon photonics holds immense promise for optical signal processing, on-chip optical networks, optical sensing and metrology. However, silicon is a semiconductor with a small indirect bandgap (1.1 eV) and limited to operational wavelengths above 1.1 mum. Even though the centrosymmetric crystal structure of silicon permits third order optical nonlinearity (chi (3)), it does not provide the preferred second order nonlinearity (chi(2)) which is exploited extensively in modern nonlinear and quantum optics as well as in important technological applications such as electro-optic modulation.
520 $a This thesis presents a study on the integration of ferroelectric and piezoelectric crystalline materials onto silicon platform, focusing on applications for chip-scale nonlinear optics and optomechanics. We experimentally demonstrate integrated electro-optic modulators based on epitaxial ferroelectric barium titanate (BaTiO3; BTO) thin film on silicon substrates. BaTiO 3 shows one of the largest reported values of electro-optic efficient (bulk r51=820 pm/V) among all ferroelectrics. We study and optimize the epitaxial growth of BaTiO3 on silicon (100) surface for telecom-wavelength optical applications. Modulators based on both Mach-Zehnder interferometer and optical cavity configurations are fabricated and measured to show low half-wave-voltage-length product and high-speed operation up to 0.3 Gb/s. We find that ex-situ annealing of the epitaxial films in an oxidizing atmosphere is critical to reduce the oxygen vacancies content and the optical absorption in the BTO films.
520 $a In the thesis, we further explore two III-nitride semiconductors: piezoelectric gallium nitride (GaN) and aluminum nitride (AlN) thin films, as new material systems compatible with silicon photonics. We are able to show excellent optical transparency in both nitride films from the visible to near infrared wavelengths. Notably, the sputtered AlN thin films maintain excellent uniformity over the four-inch wafer scale and a highly out-of-plane c-axis orientation. The measured propagation loss of AlN strip waveguide is as low as 0.6 dB/cm for 1550 nm. Efficient second harmonic generation and high-speed (4.5 Gb/s) electro-optic modulation is demonstrated in AlN strip waveguides.
520 $a Combining AlN's excellent optical and mechanical qualities, we fabricate AlN ring resonators whose mechanical Brownian motion up to 1.04 GHz are sensed optically at room temperature in atmosphere. We demonstrate a piezoelectrically actuated, optically sensed resonator based on AlN. Phase noise measurement of the closed loop oscillation show promise for high-speed mass sensing and frequency control applications based on this novel piezo-opto-mechanical system.
590 $a School code: 0265.
650 4 $a Electrical engineering. $3 649834
650 4 $a Condensed matter physics. $3 3173567
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690 $a 0611
710 2 $a Yale University. $b Electrical Engineering. $3 2093152
773 0 $t Dissertation Abstracts International $g 74-04B(E).
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791 $a Ph.D.
792 $a 2012
793 $a English
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