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Voltage-Controlled Magnetic Anisotro...

Li, Xiang.

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Voltage-Controlled Magnetic Anisotropy in Heavy Metal/Ferromagnet/Insulator-Based Structures.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Voltage-Controlled Magnetic Anisotropy in Heavy Metal/Ferromagnet/Insulator-Based Structures./
作者:	Li, Xiang.
面頁冊數:	45 p.
附註:	Source: Masters Abstracts International, Volume: 55-03.
Contained By:	Masters Abstracts International55-03(E).
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1606392
ISBN:	9781339387192

Voltage-Controlled Magnetic Anisotropy in Heavy Metal/Ferromagnet/Insulator-Based Structures.
Li, Xiang.

Voltage-Controlled Magnetic Anisotropy in Heavy Metal/Ferromagnet/Insulator-Based Structures. - 45 p.

Source: Masters Abstracts International, Volume: 55-03.

Thesis (M.S.)--University of California, Los Angeles, 2016.

Electric-field assisted writing of magnetic memory that exploits the voltage-controlled magnetic anisotropy (VCMA) effect offers a great potential for high density and low power applications. Magnetoelectric Random Access Memory (MeRAM) has been investigated due to its lower switching current, compared with traditional current-controlled devices utilizing spin transfer torque (STT) or spin-orbit torque (SOT) for magnetization switching. It is of great promise to integrate MeRAM into the advanced CMOS back-end-of-line (BEOL) processes for on-chip embedded applications, and enable non-volatile electronic systems with low static power dissipation and instant-on operation capability.

ISBN: 9781339387192Subjects--Topical Terms:

649834
Electrical engineering.

Voltage-Controlled Magnetic Anisotropy in Heavy Metal/Ferromagnet/Insulator-Based Structures.
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500 $a Advisers: Kang Lung Wang; Pedram Khalili Amiri.
502 $a Thesis (M.S.)--University of California, Los Angeles, 2016.
520 $a Electric-field assisted writing of magnetic memory that exploits the voltage-controlled magnetic anisotropy (VCMA) effect offers a great potential for high density and low power applications. Magnetoelectric Random Access Memory (MeRAM) has been investigated due to its lower switching current, compared with traditional current-controlled devices utilizing spin transfer torque (STT) or spin-orbit torque (SOT) for magnetization switching. It is of great promise to integrate MeRAM into the advanced CMOS back-end-of-line (BEOL) processes for on-chip embedded applications, and enable non-volatile electronic systems with low static power dissipation and instant-on operation capability.
520 $a In this thesis, different heavy metal|ferromagnet|insulator-based structures are grown by magnetron sputtering to improve the VCMA effect over the traditional Ta|CoFeB|MgO-based structures. We also established an accurate measurement technique for VCMA characterization. An improved thermal annealing stability of VCMA over 400°C is achieved in Mo|CoFeB|MgO-based structures. In addition, we observed a weak CoFeB thickness dependence of both VCMA coefficient and interfacial perpendicular magnetic anisotropy (PMA) in both Ta|CoFeB|MgO and Mo|CoFeB|MgO-based structures.
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