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Study of electronic characteristics ...

Mulder, Watson.

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Study of electronic characteristics of heterojunction with intrinsic thin-layer devices and defect density profile of nanocrystalline silicon germanium devices.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Study of electronic characteristics of heterojunction with intrinsic thin-layer devices and defect density profile of nanocrystalline silicon germanium devices./
Author:	Mulder, Watson.
Description:	81 p.
Notes:	Source: Masters Abstracts International, Volume: 55-02.
Contained By:	Masters Abstracts International55-02(E).
Subject:	Electrical engineering. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1601803
ISBN:	9781339143699

Study of electronic characteristics of heterojunction with intrinsic thin-layer devices and defect density profile of nanocrystalline silicon germanium devices.
Mulder, Watson.

Study of electronic characteristics of heterojunction with intrinsic thin-layer devices and defect density profile of nanocrystalline silicon germanium devices. - 81 p.

Source: Masters Abstracts International, Volume: 55-02.

Thesis (M.S.)--Iowa State University, 2015.

Heterojunction with Intrinsic Thin-layer (HIT) solar cells are an important photovoltaic technology, recently reaching record power conversion efficiencies. HIT cells hold advantages over the conventional crystalline Si solar cells, such as their fabrication at lower temperatures and their shorter fabrication time. It is important to understand the electronic characteristics and transport properties of HIT cells to continue to improve their efficiencies. The fundamental measurements of a HIT solar cell with an innovative n+/p/p+ structure are presented. We also report on a series of these HIT cells fabricated on wafers with different doping concentrations, observing the relationship between doping concentration and characteristics such as open-circuit voltage and diffusion length.

ISBN: 9781339143699Subjects--Topical Terms:

649834
Electrical engineering.

Study of electronic characteristics of heterojunction with intrinsic thin-layer devices and defect density profile of nanocrystalline silicon germanium devices.
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020 $a 9781339143699
035 $a (MiAaPQ)AAI1601803
035 $a AAI1601803
040 $a MiAaPQ $c MiAaPQ
100 1 $a Mulder, Watson. $3 3182189
245 1 0 $a Study of electronic characteristics of heterojunction with intrinsic thin-layer devices and defect density profile of nanocrystalline silicon germanium devices.
300 $a 81 p.
500 $a Source: Masters Abstracts International, Volume: 55-02.
500 $a Adviser: Vikram L. Dalal.
502 $a Thesis (M.S.)--Iowa State University, 2015.
520 $a Heterojunction with Intrinsic Thin-layer (HIT) solar cells are an important photovoltaic technology, recently reaching record power conversion efficiencies. HIT cells hold advantages over the conventional crystalline Si solar cells, such as their fabrication at lower temperatures and their shorter fabrication time. It is important to understand the electronic characteristics and transport properties of HIT cells to continue to improve their efficiencies. The fundamental measurements of a HIT solar cell with an innovative n+/p/p+ structure are presented. We also report on a series of these HIT cells fabricated on wafers with different doping concentrations, observing the relationship between doping concentration and characteristics such as open-circuit voltage and diffusion length.
520 $a Nanocrystalline Silicon-Germanium (nc-SiGe) is a useful material for photovoltaic devices and photodetectors. The material features good absorption extending to the infrared region even in thin layers. Its bandgap can be adjusted between that of Si (&sim;1.1 eV) and Ge (&sim;0.7 eV) by varying the alloy composition ratio during deposition. However, there has been very little previous work to measure and understand the defect density spectrum of nc-SiGe. Defects are responsible for controlling the recombination and thus the performance of solar cell devices. Capacitance-Frequency measurements at various temperatures are used in order to estimate the trap density profile within the bandgap of nc-SiGe.
590 $a School code: 0097.
650 4 $a Electrical engineering. $3 649834
650 4 $a Low temperature physics. $3 3173917
650 4 $a Alternative Energy. $3 1035473
690 $a 0544
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690 $a 0363
710 2 $a Iowa State University. $b Electrical and Computer Engineering. $3 1018524
773 0 $t Masters Abstracts International $g 55-02(E).
790 $a 0097
791 $a M.S.
792 $a 2015
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1601803