東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Design and comparison of Si-based an...

Fu, Wei.

Linked to FindBook

Google Book

Amazon

博客來

Design and comparison of Si-based and SiC-based three-phase PV inverters.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Design and comparison of Si-based and SiC-based three-phase PV inverters./
Author:	Fu, Wei.
Description:	73 p.
Notes:	Source: Masters Abstracts International, Volume: 55-01.
Contained By:	Masters Abstracts International55-01(E).
Subject:	Electrical engineering. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1599205
ISBN:	9781339054766

Design and comparison of Si-based and SiC-based three-phase PV inverters.
Fu, Wei.

Design and comparison of Si-based and SiC-based three-phase PV inverters. - 73 p.

Source: Masters Abstracts International, Volume: 55-01.

Thesis (M.S.)--The University of Wisconsin - Milwaukee, 2015.

The opportunities for both power density and efficiency improvements of photovoltaic (PV) inverter have come with the development of commercially available wide bandgap (WBG) devices such as Gallium Nitride (GaN), and Silicon Carbide (SiC).

ISBN: 9781339054766Subjects--Topical Terms:

649834
Electrical engineering.

Design and comparison of Si-based and SiC-based three-phase PV inverters.
LDR:02638nmm a2200301 4500 001 2067332
005 20160325105910.5
008 170521s2015 ||||||||||||||||| ||eng d
020 $a 9781339054766
035 $a (MiAaPQ)AAI1599205
035 $a AAI1599205
040 $a MiAaPQ $c MiAaPQ
100 1 $a Fu, Wei. $3 3182179
245 1 0 $a Design and comparison of Si-based and SiC-based three-phase PV inverters.
300 $a 73 p.
500 $a Source: Masters Abstracts International, Volume: 55-01.
500 $a Adviser: Robert M. Cuzner.
502 $a Thesis (M.S.)--The University of Wisconsin - Milwaukee, 2015.
520 $a The opportunities for both power density and efficiency improvements of photovoltaic (PV) inverter have come with the development of commercially available wide bandgap (WBG) devices such as Gallium Nitride (GaN), and Silicon Carbide (SiC).
520 $a In this thesis, how the replacement of Silicon (Si) Insulated Gate Bipolar Transistor (IGBT), with SiC Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) affects the power density and efficiency of a solar inverter implementation is presented. The focus is on achieving a minimum volume of the output filter which meet the current harmonic performance of IEEE standard, while meeting the thermal constraint of the semiconductor device. Efficiency improvements are also characterized through an accurate calculation of device and magnetic component losses-the largest contributors to loss in the system.
520 $a MATLAB/Simulnk and PLECS are used to assist in the process. Simulation is used to calculate the differential mode pulsed voltages so that the required attenuation of the filter can be determined and to determine the maximum switching frequency at which the device can operate for a given heatsink design. Thus the power density can be compared. At the same time, by using the same filter but changing out devices, the efficiencies at the same power density can be compared.
520 $a According to the results, when both use the maximum junction temperature as the constraint, SiC-based inverter can operate at a much higher switching frequency, which leads to a significant decrease in filter components and resulting a higher power density than Si-based inverter. When operating at the same switching frequency, which means keeping the power density the same, SiC devices leads to an improvement in efficiency.
590 $a School code: 0263.
650 4 $a Electrical engineering. $3 649834
690 $a 0544
710 2 $a The University of Wisconsin - Milwaukee. $b Engineering. $3 2094093
773 0 $t Masters Abstracts International $g 55-01(E).
790 $a 0263
791 $a M.S.
792 $a 2015
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1599205