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Novel high frequency devices with gr...

Zhao, Pei.

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Novel high frequency devices with graphene and GaN.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Novel high frequency devices with graphene and GaN./
作者:	Zhao, Pei.
面頁冊數:	196 p.
附註:	Source: Dissertation Abstracts International, Volume: 77-03(E), Section: B.
Contained By:	Dissertation Abstracts International77-03B(E).
標題:	Nanotechnology. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3731640
ISBN:	9781339180472

Novel high frequency devices with graphene and GaN.
Zhao, Pei.

Novel high frequency devices with graphene and GaN. - 196 p.

Source: Dissertation Abstracts International, Volume: 77-03(E), Section: B.

Thesis (Ph.D.)--University of Notre Dame, 2015.

This work focuses on exploring new materials and new device structures to develop novel devices that can operate at very high speed.

ISBN: 9781339180472Subjects--Topical Terms:

526235
Nanotechnology.

Novel high frequency devices with graphene and GaN.
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100 1 $a Zhao, Pei. $3 3181706
245 1 0 $a Novel high frequency devices with graphene and GaN.
300 $a 196 p.
500 $a Source: Dissertation Abstracts International, Volume: 77-03(E), Section: B.
500 $a Adviser: Debdeep Jena.
502 $a Thesis (Ph.D.)--University of Notre Dame, 2015.
520 $a This work focuses on exploring new materials and new device structures to develop novel devices that can operate at very high speed.
520 $a In chapter 2, the high frequency performance limitations of graphene transistor with channel length less than 100 nm are explored. The simulated results predict that intrinsic cutoff frequency fT of graphene transistor can be close to 2 THz at 15 nm channel length.
520 $a In chapter 3, we explored the possibility of developing a 2D materials based vertical tunneling device. An analytical model to calculate the channel potentials and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The symmetric resonant peak in SymFET is a good candidate for high-speed analog applications.
520 $a Rest of the work focuses on Gallium Nitride (GaN), several novel device concepts based on GaN heterostructure have been proposed for high frequency and high power applications.
520 $a In chapter 4, we compared the performance of GaN Schottky diodes on bulk GaN substrates and GaN-on-sapphire substrates. In addition, we also discussed the lateral GaN Schottky diode between metal/2DEGs. The advantage of lateral GaN Schottky diodes is the intrinsic cutoff frequency is in the THz range.
520 $a In chapter 5, a GaN Heterostructure barrier diode (HBD) is designed using the polarization charge and band offset at the AlGaN/GaN heterojunction. The polarization charge at AlGaN/GaN interface behaves as a delta-doping which induces a barrier without any chemical doping. The IV characteristics can be explained by the barrier controlled thermionic emission current. GaN HBDs can be directly integrated with GaN HEMTs, and serve as frequency multipliers or mixers for RF applications.
520 $a In chapter 6, a GaN based negative effective mass oscillator (NEMO) is proposed. The current in NEMO is estimated under the ballistic limits. Negative differential resistances (NDRs) can be observed with more than 50% of the injected electrons occupied the negative effective mass (NEM) region. The designed NEMO structures are grown by MBE on bulk GaN substrates. NDRs are observed in four NEMO samples under DC and pulsed measurements. The influence of traps and defects on NDRs is also discussed.
590 $a School code: 0165.
650 4 $a Nanotechnology. $3 526235
650 4 $a Electrical engineering. $3 649834
650 4 $a Theoretical physics. $3 2144760
690 $a 0652
690 $a 0544
690 $a 0753
710 2 $a University of Notre Dame. $3 807615
773 0 $t Dissertation Abstracts International $g 77-03B(E).
790 $a 0165
791 $a Ph.D.
792 $a 2015
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3731640