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High frequency signal transmission i...

Xu, Min.

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High frequency signal transmission in through silicon via based 3D integrated circuit.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	High frequency signal transmission in through silicon via based 3D integrated circuit./
作者:	Xu, Min.
面頁冊數:	167 p.
附註:	Source: Dissertation Abstracts International, Volume: 77-01(E), Section: B.
Contained By:	Dissertation Abstracts International77-01B(E).
標題:	Nanoscience. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3720252
ISBN:	9781339010236

High frequency signal transmission in through silicon via based 3D integrated circuit.
Xu, Min.

High frequency signal transmission in through silicon via based 3D integrated circuit. - 167 p.

Source: Dissertation Abstracts International, Volume: 77-01(E), Section: B.

Thesis (Ph.D.)--State University of New York at Albany, 2015.

Through silicon vias (TSVs) enable 3-dimensional (3D) integrated circuits (ICs), which have the potential to reduce the power consumption, interconnect length and overall communication latency in modern nanoelectronics systems. High-speed signal transmission channels through stacked silicon substrates are critical for 3D heterogeneous integration. This work presents systematic analyses of fabricated 3D IC test structures. This includes test structure design, fabrication, experimental characterization, equivalent circuit modeling and full wave simulations for high-speed signal transmission of the TSV based 3D IC channels.

ISBN: 9781339010236Subjects--Topical Terms:

587832
Nanoscience.

High frequency signal transmission in through silicon via based 3D integrated circuit.
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245 1 0 $a High frequency signal transmission in through silicon via based 3D integrated circuit.
300 $a 167 p.
500 $a Source: Dissertation Abstracts International, Volume: 77-01(E), Section: B.
500 $a Adviser: Robert E. Geer.
502 $a Thesis (Ph.D.)--State University of New York at Albany, 2015.
520 $a Through silicon vias (TSVs) enable 3-dimensional (3D) integrated circuits (ICs), which have the potential to reduce the power consumption, interconnect length and overall communication latency in modern nanoelectronics systems. High-speed signal transmission channels through stacked silicon substrates are critical for 3D heterogeneous integration. This work presents systematic analyses of fabricated 3D IC test structures. This includes test structure design, fabrication, experimental characterization, equivalent circuit modeling and full wave simulations for high-speed signal transmission of the TSV based 3D IC channels.
520 $a In a 2-tier stack system, three distinct signal/ground TSV configurations (1SXG TSV) were investigated. Scattering parameter measurements showed low signal loss of the channels. Both full wave simulation and equivalent circuit models exhibited excellent agreement with measurement results. The systematic analyses indicates that proper interconnect design needs to be considered that takes into account the tradeoffs between ground TSV capacitance-induced impedance change and EM shielding effects. Fewer ground TSVs are preferred considering both 3D channel transmission efficiency and die area consumption for 3D ICs.
520 $a Test structures were also designed and fabricated to investigate high-speed signaling in a multi-layer stacked die system. Experimental characterization of the 3D systems was conducted to investigate the impacts of substrate conductivity, redistribution layer (RDL) interconnects, and multi-tier stacking on the high-speed signal transmission of 3D IC channels. Equivalent circuit models for key components (TSV, RDL, bond pad) in 3D IC channels were developed and validated by experimental results. Comprehensive analyses with validated circuit models provided critical insights and guidance to key component design for a 3D channel in a stacked system.
520 $a For complete 3D IC channels with active transmitters and receivers, simulation-based analyses were performed for high-speed single-ended and differential signaling schemes. Signal integrity, timing parameter and power consumption analyses were performed with various transceivers and channel configurations. This work provides comprehensive analyses for high-speed transmission considerations ranging from the component to circuit level perspectives. Such an analysis will prove invaluable for future designers and aid in the design of heterogeneous 3D IC systems.
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710 2 $a State University of New York at Albany. $b Nanoscale Science and Engineering-Nanoscale Science. $3 1685320
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793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3720252