東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Construction and Analysis of PbSe Qu...

Gibbs, Markelle Lewis.

Linked to FindBook

Google Book

Amazon

博客來

Construction and Analysis of PbSe Quantum Dot Heterojunction Solar Cells.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Construction and Analysis of PbSe Quantum Dot Heterojunction Solar Cells./
Author:	Gibbs, Markelle Lewis.
Description:	96 p.
Notes:	Source: Dissertation Abstracts International, Volume: 75-10(E), Section: B.
Contained By:	Dissertation Abstracts International75-10B(E).
Subject:	Materials science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3626978
ISBN:	9781321020625

Construction and Analysis of PbSe Quantum Dot Heterojunction Solar Cells.
Gibbs, Markelle Lewis.

Construction and Analysis of PbSe Quantum Dot Heterojunction Solar Cells. - 96 p.

Source: Dissertation Abstracts International, Volume: 75-10(E), Section: B.

Thesis (Ph.D.)--University of California, Irvine, 2014.

PbX (X = S, Se, Te) quantum dot (QD) thin films have the potential to push photovoltaic efficiencies over the Shockley-Queisser limit. The focus of this thesis is the development of a robust and reproducible process for making thin film PbX QD heterojunction solar cells (HSC). Literature already has several examples of methods used to optimize the synthesis and film deposition techniques for PbX QD devices. So experiments here are designed to optimize the sputtering conditions and material selection for the metal oxide window layers. PbSe QDs treated with 1,2-ethanedithiol (EDT) are well suited to be the conductive absorber layer of HSCs. The sputtering conditions and post deposition processing of metal oxide window layers, ZnO and SnO2 thin films, are correlated with HSC performance. Junctions made of 1.4 eV PbSe QDs and ZnO produce HSCs with an average efficiency of 2.9% (+/- 0.1%), while SnO2 is a better match with 1.1 eV PbSe QDs with an average efficiency of 0.9% (+/- 0.1%). Photovoltaic performance is very sensitive to the relative band positions of the metal oxide window layer and PbSe QDs. However, this sensitivity is confined to the interface of the heterojunction. Changing the bulk material of the window layer had no detectable impact on the performance of the PbSe QD HSCs. This demonstrates the need for precise control of material surface properties and interfacial engineering. impact on the performance of the PbSe QD HSCs. This demonstrates the need for precise control of material surface properties and interfacial engineering.

ISBN: 9781321020625Subjects--Topical Terms:

543314
Materials science.

Construction and Analysis of PbSe Quantum Dot Heterojunction Solar Cells.
LDR:02460nmm a2200289 4500 001 2066063
005 20151221141523.5
008 170521s2014 ||||||||||||||||| ||eng d
020 $a 9781321020625
035 $a (MiAaPQ)AAI3626978
035 $a AAI3626978
040 $a MiAaPQ $c MiAaPQ
100 1 $a Gibbs, Markelle Lewis. $3 3180827
245 1 0 $a Construction and Analysis of PbSe Quantum Dot Heterojunction Solar Cells.
300 $a 96 p.
500 $a Source: Dissertation Abstracts International, Volume: 75-10(E), Section: B.
500 $a Adviser: Matthew Law.
502 $a Thesis (Ph.D.)--University of California, Irvine, 2014.
520 $a PbX (X = S, Se, Te) quantum dot (QD) thin films have the potential to push photovoltaic efficiencies over the Shockley-Queisser limit. The focus of this thesis is the development of a robust and reproducible process for making thin film PbX QD heterojunction solar cells (HSC). Literature already has several examples of methods used to optimize the synthesis and film deposition techniques for PbX QD devices. So experiments here are designed to optimize the sputtering conditions and material selection for the metal oxide window layers. PbSe QDs treated with 1,2-ethanedithiol (EDT) are well suited to be the conductive absorber layer of HSCs. The sputtering conditions and post deposition processing of metal oxide window layers, ZnO and SnO2 thin films, are correlated with HSC performance. Junctions made of 1.4 eV PbSe QDs and ZnO produce HSCs with an average efficiency of 2.9% (+/- 0.1%), while SnO2 is a better match with 1.1 eV PbSe QDs with an average efficiency of 0.9% (+/- 0.1%). Photovoltaic performance is very sensitive to the relative band positions of the metal oxide window layer and PbSe QDs. However, this sensitivity is confined to the interface of the heterojunction. Changing the bulk material of the window layer had no detectable impact on the performance of the PbSe QD HSCs. This demonstrates the need for precise control of material surface properties and interfacial engineering. impact on the performance of the PbSe QD HSCs. This demonstrates the need for precise control of material surface properties and interfacial engineering.
590 $a School code: 0030.
650 4 $a Materials science. $3 543314
650 4 $a Nanoscience. $3 587832
650 4 $a Chemistry. $3 516420
690 $a 0794
690 $a 0565
690 $a 0485
710 2 $a University of California, Irvine. $b Chemistry - Ph.D.. $3 2094938
773 0 $t Dissertation Abstracts International $g 75-10B(E).
790 $a 0030
791 $a Ph.D.
792 $a 2014
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3626978