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TFT-Based Active Pixel Sensors for L...

Kunnen, George.

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TFT-Based Active Pixel Sensors for Large Area Thermal Neutron Detection.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	TFT-Based Active Pixel Sensors for Large Area Thermal Neutron Detection./
作者:	Kunnen, George.
面頁冊數:	122 p.
附註:	Source: Dissertation Abstracts International, Volume: 75-12(E), Section: B.
Contained By:	Dissertation Abstracts International75-12B(E).
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3631879
ISBN:	9781321109481

TFT-Based Active Pixel Sensors for Large Area Thermal Neutron Detection.
Kunnen, George.

TFT-Based Active Pixel Sensors for Large Area Thermal Neutron Detection. - 122 p.

Source: Dissertation Abstracts International, Volume: 75-12(E), Section: B.

Thesis (Ph.D.)--Arizona State University, 2014.

This item must not be sold to any third party vendors.

Due to diminishing availability of 3He, which is the critical component of neutron detecting proportional counters, large area flexible arrays are being considered as a potential replacement for neutron detection. A large area flexible array, utilizing semiconductors for both charged particle detection and pixel readout, ensures a large detection surface area in a light weight rugged form. Such a neutron detector could be suitable for deployment at ports of entry. The specific approach used in this research, uses a neutron converter layer which captures incident thermal neutrons, and then emits ionizing charged particles. These ionizing particles cause electron-hole pair generation within a single pixel's integrated sensing diode. The resulting charge is then amplified via a low-noise amplifier. This document begins by discussing the current state of the art in neutron detection and the associated challenges. Then, for the purpose of resolving some of these issues, recent design and modeling efforts towards developing an improved neutron detection system are described. Also presented is a low-noise active pixel sensor (APS) design capable of being implemented in low temperature indium gallium zinc oxide (InGaZnO) or amorphous silicon (a-Si:H) thin film transistor process compatible with plastic substrates. The low gain and limited scalability of this design are improved upon by implementing a new multi-stage self-resetting APS. For each APS design, successful radiation measurements are also presented using PiN diodes for charged particle detection. Next, detection array readout methodologies are modeled and analyzed, and use of a matched filter readout circuit is described as well. Finally, this document discusses detection diode integration with the designed TFT-based APSs.

ISBN: 9781321109481Subjects--Topical Terms:

649834
Electrical engineering.

TFT-Based Active Pixel Sensors for Large Area Thermal Neutron Detection.
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500 $a Adviser: David Allee.
502 $a Thesis (Ph.D.)--Arizona State University, 2014.
506 $a This item must not be sold to any third party vendors.
520 $a Due to diminishing availability of 3He, which is the critical component of neutron detecting proportional counters, large area flexible arrays are being considered as a potential replacement for neutron detection. A large area flexible array, utilizing semiconductors for both charged particle detection and pixel readout, ensures a large detection surface area in a light weight rugged form. Such a neutron detector could be suitable for deployment at ports of entry. The specific approach used in this research, uses a neutron converter layer which captures incident thermal neutrons, and then emits ionizing charged particles. These ionizing particles cause electron-hole pair generation within a single pixel's integrated sensing diode. The resulting charge is then amplified via a low-noise amplifier. This document begins by discussing the current state of the art in neutron detection and the associated challenges. Then, for the purpose of resolving some of these issues, recent design and modeling efforts towards developing an improved neutron detection system are described. Also presented is a low-noise active pixel sensor (APS) design capable of being implemented in low temperature indium gallium zinc oxide (InGaZnO) or amorphous silicon (a-Si:H) thin film transistor process compatible with plastic substrates. The low gain and limited scalability of this design are improved upon by implementing a new multi-stage self-resetting APS. For each APS design, successful radiation measurements are also presented using PiN diodes for charged particle detection. Next, detection array readout methodologies are modeled and analyzed, and use of a matched filter readout circuit is described as well. Finally, this document discusses detection diode integration with the designed TFT-based APSs.
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650 4 $a Electrical engineering. $3 649834
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