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Development of Nanosphere Lithograph...

Choi, Jeayoung.

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Development of Nanosphere Lithography Technique with Enhanced Lithographical Accuracy on Periodic Si Nanostructure for Thin Si Solar Cell Application.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Development of Nanosphere Lithography Technique with Enhanced Lithographical Accuracy on Periodic Si Nanostructure for Thin Si Solar Cell Application./
作者:	Choi, Jeayoung.
面頁冊數:	161 p.
附註:	Source: Dissertation Abstracts International, Volume: 76-09(E), Section: B.
Contained By:	Dissertation Abstracts International76-09B(E).
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3701007
ISBN:	9781321713312

Development of Nanosphere Lithography Technique with Enhanced Lithographical Accuracy on Periodic Si Nanostructure for Thin Si Solar Cell Application.
Choi, Jeayoung.

Development of Nanosphere Lithography Technique with Enhanced Lithographical Accuracy on Periodic Si Nanostructure for Thin Si Solar Cell Application. - 161 p.

Source: Dissertation Abstracts International, Volume: 76-09(E), Section: B.

Thesis (Ph.D.)--Arizona State University, 2015.

This item must not be sold to any third party vendors.

In this thesis, a novel silica nanosphere (SNS) lithography technique has been developed to offer a fast, cost-effective, and large area applicable nano-lithography approach. The SNS can be easily deposited with a simple spin-coating process after introducing a N,N-dimethyl-formamide (DMF) solvent which can produce a highly close packed SNS monolayer over large silicon (Si) surface area, since DMF offers greatly improved wetting, capillary and convective forces in addition to slow solvent evaporation rate. Since the period and dimension of the surface pattern can be conveniently changed and controlled by introducing a desired size of SNS, and additional SNS size reduction with dry etching process, using SNS for lithography provides a highly effective nano-lithography approach for periodically arrayed nano-/micro-scale surface patterns with a desired dimension and period. Various Si nanostructures ( i.e., nanopillar, nanotip, inverted pyramid, nanohole) are successfully fabricated with the SNS nano-lithography technique by using different etching technique like anisotropic alkaline solution (i.e., KOH) etching, reactive-ion etching (RIE), and metal-assisted chemical etching (MaCE).

ISBN: 9781321713312Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Development of Nanosphere Lithography Technique with Enhanced Lithographical Accuracy on Periodic Si Nanostructure for Thin Si Solar Cell Application.
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245 1 0 $a Development of Nanosphere Lithography Technique with Enhanced Lithographical Accuracy on Periodic Si Nanostructure for Thin Si Solar Cell Application.
300 $a 161 p.
500 $a Source: Dissertation Abstracts International, Volume: 76-09(E), Section: B.
500 $a Advisers: Christiana Honsberg; Terry Alford.
502 $a Thesis (Ph.D.)--Arizona State University, 2015.
506 $a This item must not be sold to any third party vendors.
520 $a In this thesis, a novel silica nanosphere (SNS) lithography technique has been developed to offer a fast, cost-effective, and large area applicable nano-lithography approach. The SNS can be easily deposited with a simple spin-coating process after introducing a N,N-dimethyl-formamide (DMF) solvent which can produce a highly close packed SNS monolayer over large silicon (Si) surface area, since DMF offers greatly improved wetting, capillary and convective forces in addition to slow solvent evaporation rate. Since the period and dimension of the surface pattern can be conveniently changed and controlled by introducing a desired size of SNS, and additional SNS size reduction with dry etching process, using SNS for lithography provides a highly effective nano-lithography approach for periodically arrayed nano-/micro-scale surface patterns with a desired dimension and period. Various Si nanostructures ( i.e., nanopillar, nanotip, inverted pyramid, nanohole) are successfully fabricated with the SNS nano-lithography technique by using different etching technique like anisotropic alkaline solution (i.e., KOH) etching, reactive-ion etching (RIE), and metal-assisted chemical etching (MaCE).
520 $a In this research, computational optical modeling is also introduced to design the Si nanostructure, specifically nanopillars (NPs) with a desired period and dimension. The optical properties of Si NP are calculated with two different optical modeling techniques, which are the rigorous coupled wave analysis (RCWA) and finite-difference time-domain (FDTD) methods. By using these two different optical modeling techniques, the optical properties of Si NPs with different periods and dimensions have been investigated to design ideal Si NP which can be potentially used for thin c-Si solar cell applications. From the results of the computational and experimental work, it was observed that low aspect ratio Si NPs fabricated in a periodic hexagonal array can provide highly enhanced light absorption for the target spectral range (600 &sim; 1100nm), which is attributed to (1) the effective confinement of resonant scattering within the Si NP and (2) increased high order diffraction of transmitted light providing an extended absorption length. From the research, therefore, it is successfully demonstrated that the nano-fabrication process with SNS lithography can offer enhanced lithographical accuracy to fabricate desired Si nanostructures which can realize enhanced light absorption for thin Si solar cell.
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