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Fundamental Studies of Supported Gra...

Sinha, Dhiraj P.

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Fundamental Studies of Supported Graphene Interfaces: Defect Density of States in Graphene Field Effect Transistors (FETs) and Ideal Graphene - Silicon Schottky Diodes.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Fundamental Studies of Supported Graphene Interfaces: Defect Density of States in Graphene Field Effect Transistors (FETs) and Ideal Graphene - Silicon Schottky Diodes./
Author:	Sinha, Dhiraj P.
Description:	133 p.
Notes:	Source: Dissertation Abstracts International, Volume: 76-03(E), Section: B.
Contained By:	Dissertation Abstracts International76-03B(E).
Subject:	Engineering, Materials Science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3644193
ISBN:	9781321322569

Fundamental Studies of Supported Graphene Interfaces: Defect Density of States in Graphene Field Effect Transistors (FETs) and Ideal Graphene - Silicon Schottky Diodes.
Sinha, Dhiraj P.

Fundamental Studies of Supported Graphene Interfaces: Defect Density of States in Graphene Field Effect Transistors (FETs) and Ideal Graphene - Silicon Schottky Diodes. - 133 p.

Source: Dissertation Abstracts International, Volume: 76-03(E), Section: B.

Thesis (Ph.D.)--State University of New York at Albany, 2014.

This item must not be sold to any third party vendors.

The physics of transport in atomically thin 2D materials is an active area of research, important for understanding fundamental properties of reduced dimensional materials and for applications. New phenomena based on graphene may include properties of topologically protected insulators. Applications of these materials are envisioned in electronics, optoelectronics and spintronics.

ISBN: 9781321322569Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Fundamental Studies of Supported Graphene Interfaces: Defect Density of States in Graphene Field Effect Transistors (FETs) and Ideal Graphene - Silicon Schottky Diodes.
LDR:04917nmm a2200337 4500 001 2057038
005 20150630121443.5
008 170521s2014 ||||||||||||||||| ||eng d
020 $a 9781321322569
035 $a (MiAaPQ)AAI3644193
035 $a AAI3644193
040 $a MiAaPQ $c MiAaPQ
100 1 $a Sinha, Dhiraj P. $3 3170846
245 1 0 $a Fundamental Studies of Supported Graphene Interfaces: Defect Density of States in Graphene Field Effect Transistors (FETs) and Ideal Graphene - Silicon Schottky Diodes.
300 $a 133 p.
500 $a Source: Dissertation Abstracts International, Volume: 76-03(E), Section: B.
500 $a Adviser: Ji Ung Lee.
502 $a Thesis (Ph.D.)--State University of New York at Albany, 2014.
506 $a This item must not be sold to any third party vendors.
520 $a The physics of transport in atomically thin 2D materials is an active area of research, important for understanding fundamental properties of reduced dimensional materials and for applications. New phenomena based on graphene may include properties of topologically protected insulators. Applications of these materials are envisioned in electronics, optoelectronics and spintronics.
520 $a One of the fundamental limitations of these new materials, however, is disorder. Disorder masks intrinsic properties; they are typically created when these materials are supported on a substrate. These effects are evident in many of the materials that are being studied, including MoS2, NbSe2, MoSe2, and graphene [1-4]. One manifestation of the disorder in these materials, including a gapless material like graphene, is a large hysteresis and a shift in the charge neutrality point, also known as the Dirac point in graphene. These properties have been attributed to the formation of "charge puddles" [5], but the important property, their distribution in energy, or the disorder density of states (DOS), needs further investigation.
520 $a One portion of this dissertation is focused on the direct measurement of the disorder DOS in supported graphene. We demonstrate that a transient current analysis can be used to directly determine the disorder density and their distribution in energy. This technique is directly related to the hysteresis in the transport behavior. Therefore, the technique is broadly applicable for any 2D materials. The striking feature in the disorder DOS that we measure is that these states are not localized in a few energy states - rather they form a continuum of states. Specifically, we show that the DOS is constant in energy, thus showing more detail on the nature of these states than previous studies. Furthermore, the parameters extracted are consistent with the disordered region being physically distinct and separate from the graphene itself. Experimental and theoretical analysis is provided to support the conclusions.
520 $a The other portion of this dissertation is on investigating transport mechanism in an ideal graphene - semiconductor junctions. While metal-semiconductor contacts are elementary to any electronic devices and have been investigated extensively in bulk materials, the fundamental understanding of transport in graphene - semiconductor junctions is poorly understood. In this part, we discuss fabrication of an ideal graphene/silicon Schottky junction and provide a new transport model based on the Landauer transport formalism. Ideal diode behavior on similar devices from the literature is rare. Our work hinges on the ideal diode behavior, which ensures that transport is not mediated by defects. Interface characteristic in these contacts are critical in determining the ideality in current-voltage characteristic of the junction [6, 7]. Any disorder at the interface will manifest in a behavior characteristic of non-ideal junctions. Other studies have relied on classical thermionic emission theory to explain carrier transport in graphene - semiconductor junctions [8-10]. While the characteristics follow the famous Schottky diode behavior, we demonstrate in this work that a fundamentally new approach using Landauer transport formalism describes the origin of the ideal diode current-voltage characteristics. We show that carrier transport in graphene-semiconductor systems depends on the finite density of states in graphene, which can be accounted for using the Landauer model. We conclude that the injection of carriers is limited by the finite density of states from an atomically thin semimetal. The Landauer transport formalism approach should spur further theoretical and experimental work in other 2D material based Schottky contact systems.
590 $a School code: 0668.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Nanoscience. $3 587832
650 4 $a Physics, Condensed Matter. $3 1018743
690 $a 0794
690 $a 0565
690 $a 0611
710 2 $a State University of New York at Albany. $b Nanoscale Science and Engineering-Nanoscale Engineering. $3 1674751
773 0 $t Dissertation Abstracts International $g 76-03B(E).
790 $a 0668
791 $a Ph.D.
792 $a 2014
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3644193