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Modeling and simulation of graphene ...

Chauhan, Jyotsna.

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Modeling and simulation of graphene devices.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Modeling and simulation of graphene devices./
Author:	Chauhan, Jyotsna.
Description:	128 p.
Notes:	Source: Dissertation Abstracts International, Volume: 74-09(E), Section: B.
Contained By:	Dissertation Abstracts International74-09B(E).
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3569418
ISBN:	9781303066825

Modeling and simulation of graphene devices.
Chauhan, Jyotsna.

Modeling and simulation of graphene devices. - 128 p.

Source: Dissertation Abstracts International, Volume: 74-09(E), Section: B.

Thesis (Ph.D.)--University of Florida, 2012.

This item is not available from ProQuest Dissertations & Theses.

Graphene has been explored as one of the promising materials to sustain Moore's law especially with silicon approaching its limits. The extraordinary electronic properties of graphene like high mobility, high saturation velocity etc. have created a gold rush for graphene based electronics. The numerical study in this dissertation provides valuable insights into device physics and characteristics of graphene Field Effect Transistors (FETs).

ISBN: 9781303066825Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Modeling and simulation of graphene devices.
LDR:03505nmm a2200385 4500 001 2056959
005 20150630121428.5
008 170521s2012 ||||||||||||||||| ||eng d
020 $a 9781303066825
035 $a (MiAaPQ)AAI3569418
035 $a AAI3569418
040 $a MiAaPQ $c MiAaPQ
100 1 $a Chauhan, Jyotsna. $3 3170753
245 1 0 $a Modeling and simulation of graphene devices.
300 $a 128 p.
500 $a Source: Dissertation Abstracts International, Volume: 74-09(E), Section: B.
500 $a Adviser: Jing Guo.
502 $a Thesis (Ph.D.)--University of Florida, 2012.
506 $a This item is not available from ProQuest Dissertations & Theses.
506 $a This item must not be sold to any third party vendors.
506 $a This item must not be added to any third party search indexes.
520 $a Graphene has been explored as one of the promising materials to sustain Moore's law especially with silicon approaching its limits. The extraordinary electronic properties of graphene like high mobility, high saturation velocity etc. have created a gold rush for graphene based electronics. The numerical study in this dissertation provides valuable insights into device physics and characteristics of graphene Field Effect Transistors (FETs).
520 $a First part of dissertation studies the effect of inelastic phonon scattering in graphene FETs using semi classical approach. A kink behavior due to ambipolar transport is observed. Even the low field mobility is affected by inelastic phonon scattering in recent graphene FET experiments reporting high mobilities. Physical mechanisms for good linearity are explained.
520 $a The high frequency performance limits of graphene FETs are studied by running quantum simulations. Although Klein band-to-band tunneling is significant for sub-100nm graphene FETs, it is possible to achieve a good transconductance and ballistic on-off ratio larger than 3 even at a channel length of 20nm. At a channel length of 20nm, the intrinsic cut-off frequency remains at a couple of THz for various gate insulator thickness values, but a thin gate insulator is necessary for a good transconductance and smaller degradation of cut-off frequency in the presence of parasitic capacitance. With a thin high-kappa gate insulator, the intrinsic ballistic fT is above 5THz for gate length of 10nm. The source and drain resistance severely degrade RF parameters, fMAX and f T. It is found that the intrinsic fT is close to the LC characteristic frequency set by graphene kinetic inductance and quantum capacitance.
520 $a Graphene on silicon contacts are modeled. Graphene on silicon forms Schottky contact with a flexibility to tune the Schottky barrier height (SBH) by silicon doping and gate voltage. Multiple layers of graphene at the interface as well as donor type interface states reduce the gate modulation.
520 $a Last subject investigates the thermoelectric transport properties of graphene FETs in presence of elastic and surface polar phonon scattering. It is found that scattering reduces the thermoelectric power. In addition, surface polar phonon scattering also degrades the symmetry of TEP with respect to the Dirac point.
590 $a School code: 0070.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Physics, Theory. $3 1019422
650 4 $a Physics, Quantum. $3 1671062
650 4 $a Physics, Condensed Matter. $3 1018743
690 $a 0544
690 $a 0753
690 $a 0599
690 $a 0611
710 2 $a University of Florida. $3 718949
773 0 $t Dissertation Abstracts International $g 74-09B(E).
790 $a 0070
791 $a Ph.D.
792 $a 2012
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3569418