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Chalcogenide based materials and dev...

Salas-Villasenor, Ana Lizeth.

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Chalcogenide based materials and devices for flexible electronics applications.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Chalcogenide based materials and devices for flexible electronics applications./
Author:	Salas-Villasenor, Ana Lizeth.
Description:	281 p.
Notes:	Source: Dissertation Abstracts International, Volume: 74-12(E), Section: B.
Contained By:	Dissertation Abstracts International74-12B(E).
Subject:	Engineering, Materials Science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3592217
ISBN:	9781303332005

Chalcogenide based materials and devices for flexible electronics applications.
Salas-Villasenor, Ana Lizeth.

Chalcogenide based materials and devices for flexible electronics applications. - 281 p.

Source: Dissertation Abstracts International, Volume: 74-12(E), Section: B.

Thesis (Ph.D.)--The University of Texas at Dallas, 2013.

The scaling of large-area electronics for applications in flat-panel displays, digital X-ray images, and flexible electronics is pushing the technological and cost limits of conventional materials and device processing. Chemical bath deposited chalcogenide films are attractive for thin film transistors (TFTs) for large area electronics given its simple fabrication, low temperature and compatibility with most substrates. In this dissertation, we describe the development of a high performance chalcogenide based TFTs using chemical bath deposition (CBD) methods. Cadmium sulfide (CdS) and lead sulfide (PbS) are used as the TFT channel layer. The influence of several CBD parameters is studied. CBD pH and CdS film thickness have a profound influence on the TFT electrical characteristics. These parameters impact film cluster size and impurity concentration. With the optimized CdS deposition conditions TFTs with excellent electrical properties are demonstrated. With a novel photolithography approach demonstrated here, TFTs with mobilities as high as 18 cm2 /V s, Ion/Ioff of 109 and V T shift of less than 0.1 eV were fabricated. To achieve these TFTs characteristics, a variety of contact materials, gate dielectrics, annealing conditions and device structures were studied. The factors affecting VT instability for CdS based TFTs are also presented and correlated to electrode materials, gate dielectrics, and post-annealing. In summary, TFT instability is correlated to traps and impurities at the dielectric/semiconductor and/or in the semiconductor film. In addition, this dissertation demonstrates CdS TFTs integration in hybrid complementary metal-oxide-semiconductor (CMOS) circuits. In particular, logic gates and ferroelectric random access (FRAM) memory cells are demonstrated. Finally, CdS based TFTs on flexible and transparent substrates with excellent stability and mobility of 10-18 cm2/V-s, threshold voltage of 1.6-4.8 V, and Ion/Ioff ratios of 107 are demonstrated. This mobility is among the highest values ever reported for a fully patterned TFT fabricated with CdS as the semiconductor and the first CdS-TFTs built on a flexible substrate.

ISBN: 9781303332005Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Chalcogenide based materials and devices for flexible electronics applications.
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100 1 $a Salas-Villasenor, Ana Lizeth. $3 3168650
245 1 0 $a Chalcogenide based materials and devices for flexible electronics applications.
300 $a 281 p.
500 $a Source: Dissertation Abstracts International, Volume: 74-12(E), Section: B.
500 $a Advisers: Manuel A. Quevedo-Lopez; Bruce E. Gnade.
502 $a Thesis (Ph.D.)--The University of Texas at Dallas, 2013.
520 $a The scaling of large-area electronics for applications in flat-panel displays, digital X-ray images, and flexible electronics is pushing the technological and cost limits of conventional materials and device processing. Chemical bath deposited chalcogenide films are attractive for thin film transistors (TFTs) for large area electronics given its simple fabrication, low temperature and compatibility with most substrates. In this dissertation, we describe the development of a high performance chalcogenide based TFTs using chemical bath deposition (CBD) methods. Cadmium sulfide (CdS) and lead sulfide (PbS) are used as the TFT channel layer. The influence of several CBD parameters is studied. CBD pH and CdS film thickness have a profound influence on the TFT electrical characteristics. These parameters impact film cluster size and impurity concentration. With the optimized CdS deposition conditions TFTs with excellent electrical properties are demonstrated. With a novel photolithography approach demonstrated here, TFTs with mobilities as high as 18 cm2 /V s, Ion/Ioff of 109 and V T shift of less than 0.1 eV were fabricated. To achieve these TFTs characteristics, a variety of contact materials, gate dielectrics, annealing conditions and device structures were studied. The factors affecting VT instability for CdS based TFTs are also presented and correlated to electrode materials, gate dielectrics, and post-annealing. In summary, TFT instability is correlated to traps and impurities at the dielectric/semiconductor and/or in the semiconductor film. In addition, this dissertation demonstrates CdS TFTs integration in hybrid complementary metal-oxide-semiconductor (CMOS) circuits. In particular, logic gates and ferroelectric random access (FRAM) memory cells are demonstrated. Finally, CdS based TFTs on flexible and transparent substrates with excellent stability and mobility of 10-18 cm2/V-s, threshold voltage of 1.6-4.8 V, and Ion/Ioff ratios of 107 are demonstrated. This mobility is among the highest values ever reported for a fully patterned TFT fabricated with CdS as the semiconductor and the first CdS-TFTs built on a flexible substrate.
590 $a School code: 0382.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Engineering, General. $3 1020744
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710 2 $a The University of Texas at Dallas. $b Materials Science and Engineering. $3 3168649
773 0 $t Dissertation Abstracts International $g 74-12B(E).
790 $a 0382
791 $a Ph.D.
792 $a 2013
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3592217