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Growth and Characterization of Thin ...

Li, You.

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Growth and Characterization of Thin Films of High Performance Microwave Dielectrics.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Growth and Characterization of Thin Films of High Performance Microwave Dielectrics./
作者:	Li, You.
面頁冊數:	65 p.
附註:	Source: Masters Abstracts International, Volume: 52-01.
Contained By:	Masters Abstracts International52-01(E).
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1540565
ISBN:	9781303197420

Growth and Characterization of Thin Films of High Performance Microwave Dielectrics.
Li, You.

Growth and Characterization of Thin Films of High Performance Microwave Dielectrics. - 65 p.

Source: Masters Abstracts International, Volume: 52-01.

Thesis (M.S.)--Arizona State University, 2013.

Microwave dielectrics are widely used to make resonators and filters in telecommunication systems. The production of thin films with high dielectric constant and low loss could potentially enable a marked reduction in the size of devices and systems. However, studies of these materials in thin film form are very sparse.

ISBN: 9781303197420Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Growth and Characterization of Thin Films of High Performance Microwave Dielectrics.
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245 1 0 $a Growth and Characterization of Thin Films of High Performance Microwave Dielectrics.
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500 $a Source: Masters Abstracts International, Volume: 52-01.
500 $a Adviser: Nathan Newman.
502 $a Thesis (M.S.)--Arizona State University, 2013.
520 $a Microwave dielectrics are widely used to make resonators and filters in telecommunication systems. The production of thin films with high dielectric constant and low loss could potentially enable a marked reduction in the size of devices and systems. However, studies of these materials in thin film form are very sparse.
520 $a In this research, experiments were carried out on practical high-performance dielectrics including ZrTiO4-ZnNb2O6 (ZTZN) and Ba(Co,Zn)1/3Nb2/3O3 (BCZN) with high dielectric constant and low loss tangent. Thin films were deposited by laser ablation on various substrates, with a systematical study of growth conditions like substrate temperature, oxygen pressure and annealing to optimize the film quality, and the compositional, microstructural, optical and electric properties were characterized. The deposited ZTZN films were randomly oriented polycrystalline on Si substrate and textured on MgO substrate with a tetragonal lattice change at elevated temperature. The BCZN films deposited on MgO substrate showed superior film quality relative to that on other substrates, which grow epitaxially with an orientation of (001) // MgO (001) and (100) // MgO (100) when substrate temperature was above 500 °C. In-situ annealing at growth temperature in 200 mTorr oxygen pressure was found to enhance the quality of the films, reducing the peak width of the X-ray Diffraction (XRD) rocking curve to 0.53° and the chimin of channeling Rutherford Backscattering Spectrometry (RBS) to 8.8% when grown at 800°C. Atomic Force Microscopy (AFM) was used to study the topography and found a monotonic decrease in the surface roughness when the growth temperature increased. Optical absorption and transmission measurements were used to determine the energy bandgap and the refractive index respectively. A low-frequency dielectric constant of 34 was measured using a planar interdigital measurement structure. The resistivity of the film is &sim;3x1010 &OHgr;·cm at room temperature and has an activation energy of thermal activated current of 0.66 eV.
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793 $a English
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