東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Dielectric breakdown in gigascale el...

Borja, Juan Pablo.

FindBook

Google Book

Amazon

博客來

Dielectric breakdown in gigascale electronics = time dependent failure mechanisms /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Dielectric breakdown in gigascale electronics/ by Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky.
其他題名:	time dependent failure mechanisms /
作者:	Borja, Juan Pablo.
其他作者:	Lu, Toh-Ming.
出版者:	Cham :Springer International Publishing : : 2016.,
面頁冊數:	viii, 105 p. :ill., digital ;24 cm.
內容註:	Introduction -- General Theories -- Measurement Tools and Test Structures -- Experimental Techniques -- Breakdown Experiments -- Kinetics of Charge Carrier Confinement in Thin Dielectrics -- Theory of Dielectric Breakdown in Nanoporous Thin Films -- Dielectric Breakdown in Copper Interconnects -- Reconsidering Conventional Models.
Contained By:	Springer eBooks
標題:	Microelectronics - Materials. -
電子資源:	http://dx.doi.org/10.1007/978-3-319-43220-5
ISBN:	9783319432205$q(electronic bk.)

Dielectric breakdown in gigascale electronics = time dependent failure mechanisms /
Borja, Juan Pablo.

Dielectric breakdown in gigascale electronicstime dependent failure mechanisms /[electronic resource] :by Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky. - Cham :Springer International Publishing :2016. - viii, 105 p. :ill., digital ;24 cm. - SpringerBriefs in materials,2192-1091. - SpringerBriefs in materials..

Introduction -- General Theories -- Measurement Tools and Test Structures -- Experimental Techniques -- Breakdown Experiments -- Kinetics of Charge Carrier Confinement in Thin Dielectrics -- Theory of Dielectric Breakdown in Nanoporous Thin Films -- Dielectric Breakdown in Copper Interconnects -- Reconsidering Conventional Models.

This book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics. Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation.

ISBN: 9783319432205$q(electronic bk.)

Standard No.: 10.1007/978-3-319-43220-5doiSubjects--Topical Terms:

656983
Microelectronics
--Materials.

LC Class. No.: TK7874

Dewey Class. No.: 621.381

Dielectric breakdown in gigascale electronics = time dependent failure mechanisms /
LDR:02743nmm a2200337 a 4500 001 2052340
003 DE-He213
005 20160916153721.0
006 m d
007 cr nn 008maaau
008 170421s2016 gw s 0 eng d
020 $a 9783319432205$q(electronic bk.)
020 $a 9783319432182$q(paper)
024 7 $a 10.1007/978-3-319-43220-5 $2 doi
035 $a 978-3-319-43220-5
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7874
072 7 $a TJFD $2 bicssc
072 7 $a TEC021000 $2 bisacsh
072 7 $a TEC008080 $2 bisacsh
082 0 4 $a 621.381 $2 23
090 $a TK7874 $b .B734 2016
100 1 $a Borja, Juan Pablo. $3 3135573
245 1 0 $a Dielectric breakdown in gigascale electronics $h [electronic resource] : $b time dependent failure mechanisms / $c by Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2016.
300 $a viii, 105 p. : $b ill., digital ; $c 24 cm.
490 1 $a SpringerBriefs in materials, $x 2192-1091
505 0 $a Introduction -- General Theories -- Measurement Tools and Test Structures -- Experimental Techniques -- Breakdown Experiments -- Kinetics of Charge Carrier Confinement in Thin Dielectrics -- Theory of Dielectric Breakdown in Nanoporous Thin Films -- Dielectric Breakdown in Copper Interconnects -- Reconsidering Conventional Models.
520 $a This book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics. Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation.
650 0 $a Microelectronics $x Materials. $3 656983
650 0 $a Interfaces (Physical sciences) $3 601059
650 1 4 $a Materials Science. $3 890867
650 2 4 $a Optical and Electronic Materials. $3 891120
650 2 4 $a Nanotechnology and Microengineering. $3 1005737
650 2 4 $a Electronic Circuits and Devices. $3 1245773
650 2 4 $a Nanotechnology. $3 526235
700 1 $a Lu, Toh-Ming. $3 900981
700 1 $a Plawsky, Joel. $3 3135574
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer eBooks
830 0 $a SpringerBriefs in materials. $3 1566517
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-43220-5
950 $a Chemistry and Materials Science (Springer-11644)