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Variation-aware advanced CMOS device...

Shin, Changhwan.

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Variation-aware advanced CMOS devices and SRAM

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Variation-aware advanced CMOS devices and SRAM/ by Changhwan Shin.
作者:	Shin, Changhwan.
出版者:	Dordrecht :Springer Netherlands : : 2016.,
面頁冊數:	vii, 140 p. :ill., digital ;24 cm.
內容註:	1 Introduction and Overview -- 2 Understanding of Process-Induced Random Variation -- 3 Various Variation-Robust CMOS Device Designs -- 4 Applications to Static Random Access Memory (SRAM) -- 5 Conclusion.
Contained By:	Springer eBooks
標題:	Metal oxide semiconductors, Complementary. -
電子資源:	http://dx.doi.org/10.1007/978-94-017-7597-7
ISBN:	9789401775977

Variation-aware advanced CMOS devices and SRAM
Shin, Changhwan.

Variation-aware advanced CMOS devices and SRAM[electronic resource] /by Changhwan Shin. - Dordrecht :Springer Netherlands :2016. - vii, 140 p. :ill., digital ;24 cm. - Springer series in advanced microelectronics,v.561437-0387 ;. - Springer series in advanced microelectronics ;33..

1 Introduction and Overview -- 2 Understanding of Process-Induced Random Variation -- 3 Various Variation-Robust CMOS Device Designs -- 4 Applications to Static Random Access Memory (SRAM) -- 5 Conclusion.

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM) The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.

ISBN: 9789401775977

Standard No.: 10.1007/978-94-017-7597-7doiSubjects--Topical Terms:

649504
Metal oxide semiconductors, Complementary.

LC Class. No.: TK7871.99.M44

Dewey Class. No.: 621.384134

Variation-aware advanced CMOS devices and SRAM
LDR:02563nmm a2200337 a 4500 001 2041675
003 DE-He213
005 20161201105800.0
006 m d
007 cr nn 008maaau
008 170118s2016 ne s 0 eng d
020 $a 9789401775977 $q (electronic bk.)
020 $a 9789401775953 $q (paper)
024 7 $a 10.1007/978-94-017-7597-7 $2 doi
035 $a 978-94-017-7597-7
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.99.M44
072 7 $a TJFC $2 bicssc
072 7 $a TJFD5 $2 bicssc
072 7 $a TEC008010 $2 bisacsh
082 0 4 $a 621.384134 $2 23
090 $a TK7871.99.M44 $b S556 2016
100 1 $a Shin, Changhwan. $3 2200420
245 1 0 $a Variation-aware advanced CMOS devices and SRAM $h [electronic resource] / $c by Changhwan Shin.
260 $a Dordrecht : $b Springer Netherlands : $b Imprint: Springer, $c 2016.
300 $a vii, 140 p. : $b ill., digital ; $c 24 cm.
490 1 $a Springer series in advanced microelectronics, $x 1437-0387 ; $v v.56
505 0 $a 1 Introduction and Overview -- 2 Understanding of Process-Induced Random Variation -- 3 Various Variation-Robust CMOS Device Designs -- 4 Applications to Static Random Access Memory (SRAM) -- 5 Conclusion.
520 $a This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM) The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.
650 0 $a Metal oxide semiconductors, Complementary. $3 649504
650 0 $a Random access memory. $3 623617
650 1 4 $a Physics. $3 516296
650 2 4 $a Electronic Circuits and Devices. $3 1245773
650 2 4 $a Circuits and Systems. $3 896527
650 2 4 $a Semiconductors. $3 516162
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 893838
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer eBooks
830 0 $a Springer series in advanced microelectronics ; $v 33. $3 1565974
856 4 0 $u http://dx.doi.org/10.1007/978-94-017-7597-7
950 $a Physics and Astronomy (Springer-11651)