東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

New perspectives on surface passivat...

Black, Lachlan E.

FindBook

Google Book

Amazon

博客來

New perspectives on surface passivation = understanding the Si-Al2O3 interface /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	New perspectives on surface passivation/ by Lachlan E. Black.
其他題名:	understanding the Si-Al2O3 interface /
作者:	Black, Lachlan E.
出版者:	Cham :Springer International Publishing : : 2016.,
面頁冊數:	xxviii, 204 p. :ill. (some col.), digital ;24 cm.
內容註:	Introduction -- Surface Recombination Theory -- Al2O3 Deposition and Characterisation -- Electrical Properties of the Si..Al2O3 Interface -- Influence of Deposition Parameters -- Effect of Post-Deposition Thermal Processing- Effect of Surface Dopant Concentration -- Effect of Surface Orientation and Morphology -- Relationship Between Al2O3 Bulk and Interface Properties -- Conclusion.
Contained By:	Springer eBooks
標題:	Interfaces (Physical sciences) -
電子資源:	http://dx.doi.org/10.1007/978-3-319-32521-7
ISBN:	9783319325217

New perspectives on surface passivation = understanding the Si-Al2O3 interface /
Black, Lachlan E.

New perspectives on surface passivationunderstanding the Si-Al2O3 interface /[electronic resource] :by Lachlan E. Black. - Cham :Springer International Publishing :2016. - xxviii, 204 p. :ill. (some col.), digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Surface Recombination Theory -- Al2O3 Deposition and Characterisation -- Electrical Properties of the Si..Al2O3 Interface -- Influence of Deposition Parameters -- Effect of Post-Deposition Thermal Processing- Effect of Surface Dopant Concentration -- Effect of Surface Orientation and Morphology -- Relationship Between Al2O3 Bulk and Interface Properties -- Conclusion.

The book addresses the problem of passivation at the surface of crystalline silicon solar cells. More specifically, it reports on a high-throughput, industrially compatible deposition method for Al2O3, enabling its application to commercial solar cells. One of the main focus is on the analysis of the physics of Al2O3 as a passivating dielectric for silicon surfaces. This is accomplished through a comprehensive study, which moves from the particular, the case of aluminium oxide on silicon, to the general, the physics of surface recombination, and is able to connect theory with practice, highlighting relevant commercial applications.

ISBN: 9783319325217

Standard No.: 10.1007/978-3-319-32521-7doiSubjects--Topical Terms:

601059
Interfaces (Physical sciences)

LC Class. No.: QC173.4.I57

Dewey Class. No.: 541.33

New perspectives on surface passivation = understanding the Si-Al2O3 interface /
LDR:02068nmm a2200337 a 4500 001 2035885
003 DE-He213
005 20161013114115.0
006 m d
007 cr nn 008maaau
008 161117s2016 gw s 0 eng d
020 $a 9783319325217 $q (electronic bk.)
020 $a 9783319325200 $q (paper)
024 7 $a 10.1007/978-3-319-32521-7 $2 doi
035 $a 978-3-319-32521-7
040 $a GP $c GP
041 0 $a eng
050 4 $a QC173.4.I57
072 7 $a THRD $2 bicssc
072 7 $a THRM $2 bicssc
072 7 $a TEC046000 $2 bisacsh
082 0 4 $a 541.33 $2 23
090 $a QC173.4.I57 $b B627 2016
100 1 $a Black, Lachlan E. $3 2191554
245 1 0 $a New perspectives on surface passivation $h [electronic resource] : $b understanding the Si-Al2O3 interface / $c by Lachlan E. Black.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2016.
300 $a xxviii, 204 p. : $b ill. (some col.), digital ; $c 24 cm.
490 1 $a Springer theses, $x 2190-5053
505 0 $a Introduction -- Surface Recombination Theory -- Al2O3 Deposition and Characterisation -- Electrical Properties of the Si..Al2O3 Interface -- Influence of Deposition Parameters -- Effect of Post-Deposition Thermal Processing- Effect of Surface Dopant Concentration -- Effect of Surface Orientation and Morphology -- Relationship Between Al2O3 Bulk and Interface Properties -- Conclusion.
520 $a The book addresses the problem of passivation at the surface of crystalline silicon solar cells. More specifically, it reports on a high-throughput, industrially compatible deposition method for Al2O3, enabling its application to commercial solar cells. One of the main focus is on the analysis of the physics of Al2O3 as a passivating dielectric for silicon surfaces. This is accomplished through a comprehensive study, which moves from the particular, the case of aluminium oxide on silicon, to the general, the physics of surface recombination, and is able to connect theory with practice, highlighting relevant commercial applications.
650 0 $a Interfaces (Physical sciences) $3 601059
650 1 4 $a Engineering. $3 586835
650 2 4 $a Power Electronics, Electrical Machines and Networks. $3 1001796
650 2 4 $a Surfaces and Interfaces, Thin Films. $3 892408
650 2 4 $a Energy Technology. $3 1001977
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer eBooks
830 0 $a Springer theses. $3 1314442
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-32521-7
950 $a Engineering (Springer-11647)