語系:
繁體中文
English
說明(常見問題)
回圖書館首頁
手機版館藏查詢
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Tunneling field effect transistor te...
~
Zhang, Lining.
FindBook
Google Book
Amazon
博客來
Tunneling field effect transistor technology
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Tunneling field effect transistor technology/ edited by Lining Zhang, Mansun Chan.
其他作者:
Zhang, Lining.
出版者:
Cham :Springer International Publishing : : 2016.,
面頁冊數:
ix, 213 p. :ill. (some col.), digital ;24 cm.
Contained By:
Springer eBooks
標題:
Field-effect transistors. -
電子資源:
http://dx.doi.org/10.1007/978-3-319-31653-6
ISBN:
9783319316536
Tunneling field effect transistor technology
Tunneling field effect transistor technology
[electronic resource] /edited by Lining Zhang, Mansun Chan. - Cham :Springer International Publishing :2016. - ix, 213 p. :ill. (some col.), digital ;24 cm.
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs) Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.
ISBN: 9783319316536
Standard No.: 10.1007/978-3-319-31653-6doiSubjects--Topical Terms:
700655
Field-effect transistors.
LC Class. No.: TK7871.95
Dewey Class. No.: 621.3815284
Tunneling field effect transistor technology
LDR
:01513nmm a2200301 a 4500
001
2035874
003
DE-He213
005
20161013094226.0
006
m d
007
cr nn 008maaau
008
161117s2016 gw s 0 eng d
020
$a
9783319316536
$q
(electronic bk.)
020
$a
9783319316512
$q
(paper)
024
7
$a
10.1007/978-3-319-31653-6
$2
doi
035
$a
978-3-319-31653-6
040
$a
GP
$c
GP
041
0
$a
eng
050
4
$a
TK7871.95
072
7
$a
TJFC
$2
bicssc
072
7
$a
TEC008010
$2
bisacsh
082
0 4
$a
621.3815284
$2
23
090
$a
TK7871.95
$b
.T926 2016
245
0 0
$a
Tunneling field effect transistor technology
$h
[electronic resource] /
$c
edited by Lining Zhang, Mansun Chan.
260
$a
Cham :
$b
Springer International Publishing :
$b
Imprint: Springer,
$c
2016.
300
$a
ix, 213 p. :
$b
ill. (some col.), digital ;
$c
24 cm.
520
$a
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs) Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.
650
0
$a
Field-effect transistors.
$3
700655
650
1 4
$a
Engineering.
$3
586835
650
2 4
$a
Circuits and Systems.
$3
896527
650
2 4
$a
Electronic Circuits and Devices.
$3
1245773
650
2 4
$a
Electronics and Microelectronics, Instrumentation.
$3
893838
700
1
$a
Zhang, Lining.
$3
2191536
700
1
$a
Chan, Mansun.
$3
2191537
710
2
$a
SpringerLink (Online service)
$3
836513
773
0
$t
Springer eBooks
856
4 0
$u
http://dx.doi.org/10.1007/978-3-319-31653-6
950
$a
Engineering (Springer-11647)
筆 0 讀者評論
館藏地:
全部
電子資源
出版年:
卷號:
館藏
1 筆 • 頁數 1 •
1
條碼號
典藏地名稱
館藏流通類別
資料類型
索書號
使用類型
借閱狀態
預約狀態
備註欄
附件
W9279718
電子資源
11.線上閱覽_V
電子書
EB TK7871.95
一般使用(Normal)
在架
0
1 筆 • 頁數 1 •
1
多媒體
評論
新增評論
分享你的心得
Export
取書館
處理中
...
變更密碼
登入