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The source/drain engineering of nano...

Li, Zhiqiang.

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The source/drain engineering of nanoscale Germanium-based MOS devices

Record Type:	Electronic resources : Monograph/item
Title/Author:	The source/drain engineering of nanoscale Germanium-based MOS devices/ by Zhiqiang Li.
Author:	Li, Zhiqiang.
Published:	Berlin, Heidelberg :Springer Berlin Heidelberg : : 2016.,
Description:	xiv, 59 p. :ill., digital ;24 cm.
[NT 15003449]:	Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.
Contained By:	Springer eBooks
Subject:	Metal oxide semiconductor field-effect transistors. -
Online resource:	http://dx.doi.org/10.1007/978-3-662-49683-1
ISBN:	9783662496831

The source/drain engineering of nanoscale Germanium-based MOS devices
Li, Zhiqiang.

The source/drain engineering of nanoscale Germanium-based MOS devices[electronic resource] /by Zhiqiang Li. - Berlin, Heidelberg :Springer Berlin Heidelberg :2016. - xiv, 59 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.

ISBN: 9783662496831

Standard No.: 10.1007/978-3-662-49683-1doiSubjects--Topical Terms:

553297
Metal oxide semiconductor field-effect transistors.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.38152

The source/drain engineering of nanoscale Germanium-based MOS devices
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245 1 4 $a The source/drain engineering of nanoscale Germanium-based MOS devices $h [electronic resource] / $c by Zhiqiang Li.
260 $a Berlin, Heidelberg : $b Springer Berlin Heidelberg : $b Imprint: Springer, $c 2016.
300 $a xiv, 59 p. : $b ill., digital ; $c 24 cm.
490 1 $a Springer theses, $x 2190-5053
505 0 $a Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.
650 0 $a Metal oxide semiconductor field-effect transistors. $3 553297
650 0 $a Metal oxide semiconductors, Complementary. $3 649504
650 0 $a Germanium $x Electric properties. $3 2187093
650 1 4 $a Physics. $3 516296
650 2 4 $a Semiconductors. $3 516162
650 2 4 $a Electronic Circuits and Devices. $3 1245773
650 2 4 $a Nanoscale Science and Technology. $3 1244861
650 2 4 $a Solid State Physics. $3 1066374
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830 0 $a Springer theses. $3 1314442
856 4 0 $u http://dx.doi.org/10.1007/978-3-662-49683-1
950 $a Physics and Astronomy (Springer-11651)