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Field-effect self-mixing terahertz d...

Sun, Jiandong.

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Field-effect self-mixing terahertz detectors

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Field-effect self-mixing terahertz detectors/ by Jiandong Sun.
作者:	Sun, Jiandong.
出版者:	Berlin, Heidelberg :Springer Berlin Heidelberg : : 2016.,
面頁冊數:	xviii, 126 p. :ill., digital ;24 cm.
內容註:	Introduction -- Field-Effect Self-Mixing Mechanism and Detector Model -- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT -- Realization of Resonant Plasmon Excitation and Detection -- Scanning Near-Field Probe for Antenna Characterization -- Applications -- Conclusions and Outlook.
Contained By:	Springer eBooks
標題:	Terahertz technology. -
電子資源:	http://dx.doi.org/10.1007/978-3-662-48681-8
ISBN:	9783662486818$q(electronic bk.)

Field-effect self-mixing terahertz detectors
Sun, Jiandong.

Field-effect self-mixing terahertz detectors[electronic resource] /by Jiandong Sun. - Berlin, Heidelberg :Springer Berlin Heidelberg :2016. - xviii, 126 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Field-Effect Self-Mixing Mechanism and Detector Model -- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT -- Realization of Resonant Plasmon Excitation and Detection -- Scanning Near-Field Probe for Antenna Characterization -- Applications -- Conclusions and Outlook.

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.

ISBN: 9783662486818$q(electronic bk.)

Standard No.: 10.1007/978-3-662-48681-8doiSubjects--Topical Terms:

1002586
Terahertz technology.

LC Class. No.: TK7877

Dewey Class. No.: 621.3813

Field-effect self-mixing terahertz detectors
LDR:02376nmm a2200337 a 4500 001 2030350
003 DE-He213
005 20160819111135.0
006 m d
007 cr nn 008maaau
008 160908s2016 gw s 0 eng d
020 $a 9783662486818$q(electronic bk.)
020 $a 9783662486795$q(paper)
024 7 $a 10.1007/978-3-662-48681-8 $2 doi
035 $a 978-3-662-48681-8
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7877
072 7 $a TJFN $2 bicssc
072 7 $a TEC024000 $2 bisacsh
072 7 $a TEC030000 $2 bisacsh
082 0 4 $a 621.3813 $2 23
090 $a TK7877 $b .S957 2016
100 1 $a Sun, Jiandong. $3 2181872
245 1 0 $a Field-effect self-mixing terahertz detectors $h [electronic resource] / $c by Jiandong Sun.
260 $a Berlin, Heidelberg : $b Springer Berlin Heidelberg : $b Imprint: Springer, $c 2016.
300 $a xviii, 126 p. : $b ill., digital ; $c 24 cm.
490 1 $a Springer theses, $x 2190-5053
505 0 $a Introduction -- Field-Effect Self-Mixing Mechanism and Detector Model -- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT -- Realization of Resonant Plasmon Excitation and Detection -- Scanning Near-Field Probe for Antenna Characterization -- Applications -- Conclusions and Outlook.
520 $a A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.
650 0 $a Terahertz technology. $3 1002586
650 1 4 $a Engineering. $3 586835
650 2 4 $a Microwaves, RF and Optical Engineering. $3 893985
650 2 4 $a Optics, Optoelectronics, Plasmonics and Optical Devices. $3 1066388
650 2 4 $a Semiconductors. $3 516162
650 2 4 $a Solid State Physics. $3 1066374
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer eBooks
830 0 $a Springer theses. $3 1314442
856 4 0 $u http://dx.doi.org/10.1007/978-3-662-48681-8
950 $a Engineering (Springer-11647)