Fundamentals of bias temperature ins...
Mahapatra, Souvik.

FindBook      Google Book      Amazon      博客來     
  • Fundamentals of bias temperature instability in MOS transistors = characterization methods, process and materials impact, DC and AC modeling /
  • 紀錄類型: 書目-電子資源 : Monograph/item
    正題名/作者: Fundamentals of bias temperature instability in MOS transistors/ edited by Souvik Mahapatra.
    其他題名: characterization methods, process and materials impact, DC and AC modeling /
    其他作者: Mahapatra, Souvik.
    出版者: New Delhi :Springer India : : 2016.,
    面頁冊數: xvi, 269 p. :ill., digital ;24 cm.
    內容註: Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs -- Characterization Methods for BTI Degradation and Associated Gate Insulator Defects -- Physical Mechanism of BTI Degradation - Direct Estimation of Trap Generation and Trapping -- Physical Mechanism of BTI Degradation-Modeling of Process and Material Dependence -- Reaction-Diffusion Model -- Modeling of DC and AC NBTI Degradation and Recovery for SiON and HKMG MOSFETs -- Index.
    Contained By: Springer eBooks
    標題: Metal oxide semiconductor field-effect transistors. -
    電子資源: http://dx.doi.org/10.1007/978-81-322-2508-9
    ISBN: 9788132225089$q(electronic bk.)
館藏地:  出版年:  卷號: 
館藏
  • 1 筆 • 頁數 1 •
 
W9275908 電子資源 11.線上閱覽_V 電子書 EB TK7871.95 .F981 2016 一般使用(Normal) 在架 0
  • 1 筆 • 頁數 1 •
多媒體
評論
Export
取書館
 
 
變更密碼
登入