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X-ray absorption spectroscopy of sem...

Schnohr, Claudia S.

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X-ray absorption spectroscopy of semiconductors

Record Type:	Electronic resources : Monograph/item
Title/Author:	X-ray absorption spectroscopy of semiconductors/ edited by Claudia S. Schnohr, Mark C. Ridgway.
other author:	Schnohr, Claudia S.
Published:	Berlin, Heidelberg :Springer Berlin Heidelberg : : 2015.,
Description:	xvi, 361 p. :ill. (some col.), digital ;24 cm.
[NT 15003449]:	Introduction to XAS -- Crystalline Semiconductors -- Disordered Semiconductors.-- Nanostructures -- Magnetic Semiconductors.
Contained By:	Springer eBooks
Subject:	Semiconductors - Testing. -
Online resource:	http://dx.doi.org/10.1007/978-3-662-44362-0
ISBN:	9783662443620 (electronic bk.)

X-ray absorption spectroscopy of semiconductors
X-ray absorption spectroscopy of semiconductors[electronic resource] /edited by Claudia S. Schnohr, Mark C. Ridgway. - Berlin, Heidelberg :Springer Berlin Heidelberg :2015. - xvi, 361 p. :ill. (some col.), digital ;24 cm. - Springer series in optical sciences,v.1900342-4111 ;. - Springer series in optical sciences ;164..

Introduction to XAS -- Crystalline Semiconductors -- Disordered Semiconductors.-- Nanostructures -- Magnetic Semiconductors.

X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.

ISBN: 9783662443620 (electronic bk.)

Standard No.: 10.1007/978-3-662-44362-0doiSubjects--Topical Terms:

699774
Semiconductors
--Testing.

LC Class. No.: TK7871.85

Dewey Class. No.: 621.31852

X-ray absorption spectroscopy of semiconductors
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245 0 0 $a X-ray absorption spectroscopy of semiconductors $h [electronic resource] / $c edited by Claudia S. Schnohr, Mark C. Ridgway.
260 $a Berlin, Heidelberg : $b Springer Berlin Heidelberg : $b Imprint: Springer, $c 2015.
300 $a xvi, 361 p. : $b ill. (some col.), digital ; $c 24 cm.
490 1 $a Springer series in optical sciences, $x 0342-4111 ; $v v.190
505 0 $a Introduction to XAS -- Crystalline Semiconductors -- Disordered Semiconductors.-- Nanostructures -- Magnetic Semiconductors.
520 $a X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.
650 0 $a Semiconductors $x Testing. $3 699774
650 0 $a X-rays $x Industrial applications. $3 854705
650 0 $a X-ray spectroscopy. $3 560681
650 1 4 $a Physics. $3 516296
650 2 4 $a Semiconductors. $3 516162
650 2 4 $a Optical and Electronic Materials. $3 891120
650 2 4 $a Spectroscopy and Microscopy. $3 1066375
650 2 4 $a Characterization and Evaluation of Materials. $3 890988
650 2 4 $a Applied and Technical Physics. $3 1245150
650 2 4 $a Optics and Electrodynamics. $3 1066865
700 1 $a Schnohr, Claudia S. $3 2132497
700 1 $a Ridgway, Mark C. $3 2132498
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830 0 $a Springer series in optical sciences ; $v 164. $3 1568151
856 4 0 $u http://dx.doi.org/10.1007/978-3-662-44362-0
950 $a Physics and Astronomy (Springer-11651)