東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Electron Transport and Scattering in...

Sachs, Raymond Thomas.

Linked to FindBook

Google Book

Amazon

博客來

Electron Transport and Scattering in Graphene Devices Transferred to Strontium Titanate Substrates.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Electron Transport and Scattering in Graphene Devices Transferred to Strontium Titanate Substrates./
Author:	Sachs, Raymond Thomas.
Description:	132 p.
Notes:	Source: Dissertation Abstracts International, Volume: 75-02(E), Section: B.
Contained By:	Dissertation Abstracts International75-02B(E).
Subject:	Physics, Condensed Matter. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3600595
ISBN:	9781303507359

Electron Transport and Scattering in Graphene Devices Transferred to Strontium Titanate Substrates.
Sachs, Raymond Thomas.

Electron Transport and Scattering in Graphene Devices Transferred to Strontium Titanate Substrates. - 132 p.

Source: Dissertation Abstracts International, Volume: 75-02(E), Section: B.

Thesis (Ph.D.)--University of California, Riverside, 2013.

Graphene has become one of the most widely researched materials lately since its discovery in 2004. It has interested scientists due to the exceptional electronic properties of the relativistic Dirac fermions. In this thesis I will present the research I have done to study the charged impurity scattering mechanism in graphene by placing a device on a high dielectric material. An entire device with metal electrodes can be fabricated on SiO 2 substrates and transferred to any arbitrary substrate using the device transfer method that I have developed. This method eliminates the need to locate single layer graphene with optical microscopy for alignment and patterning on substrates other than 300nm thick SiO2 which may be very difficult. The target substrate I used is 200 micron thick SrTiO3 (STO). The dielectric constant is two orders of magnitude higher than SiO2 at room temperature and increases to 5,000 to 10,000 at cryogenic temperatures. We expected to observe an associated increase in the mobility with the increased dielectric screening of charged impurities. The mobility is only affected around the Dirac point which is in agreement with theory. An unusual gate dependent hysteretic effect and time dependence is also observed and explained using a surface dipole model of STO. It is graphene that is sensitive to the surface states of the STO.

ISBN: 9781303507359Subjects--Topical Terms:

1018743
Physics, Condensed Matter.

Electron Transport and Scattering in Graphene Devices Transferred to Strontium Titanate Substrates.
LDR:02286nam a2200289 4500 001 1969135
005 20141222143609.5
008 150210s2013 ||||||||||||||||| ||eng d
020 $a 9781303507359
035 $a (MiAaPQ)AAI3600595
035 $a AAI3600595
040 $a MiAaPQ $c MiAaPQ
100 1 $a Sachs, Raymond Thomas. $3 2106409
245 1 0 $a Electron Transport and Scattering in Graphene Devices Transferred to Strontium Titanate Substrates.
300 $a 132 p.
500 $a Source: Dissertation Abstracts International, Volume: 75-02(E), Section: B.
500 $a Adviser: Jing Shi.
502 $a Thesis (Ph.D.)--University of California, Riverside, 2013.
520 $a Graphene has become one of the most widely researched materials lately since its discovery in 2004. It has interested scientists due to the exceptional electronic properties of the relativistic Dirac fermions. In this thesis I will present the research I have done to study the charged impurity scattering mechanism in graphene by placing a device on a high dielectric material. An entire device with metal electrodes can be fabricated on SiO 2 substrates and transferred to any arbitrary substrate using the device transfer method that I have developed. This method eliminates the need to locate single layer graphene with optical microscopy for alignment and patterning on substrates other than 300nm thick SiO2 which may be very difficult. The target substrate I used is 200 micron thick SrTiO3 (STO). The dielectric constant is two orders of magnitude higher than SiO2 at room temperature and increases to 5,000 to 10,000 at cryogenic temperatures. We expected to observe an associated increase in the mobility with the increased dielectric screening of charged impurities. The mobility is only affected around the Dirac point which is in agreement with theory. An unusual gate dependent hysteretic effect and time dependence is also observed and explained using a surface dipole model of STO. It is graphene that is sensitive to the surface states of the STO.
590 $a School code: 0032.
650 4 $a Physics, Condensed Matter. $3 1018743
650 4 $a Nanoscience. $3 587832
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0611
690 $a 0565
690 $a 0794
710 2 $a University of California, Riverside. $b Physics. $3 2106410
773 0 $t Dissertation Abstracts International $g 75-02B(E).
790 $a 0032
791 $a Ph.D.
792 $a 2013
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3600595