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Millimeter-wave Wafer-Scale Phased A...

Shin, Woorim.

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Millimeter-wave Wafer-Scale Phased Arrays and Wireless Communication Circuits and Systems in SiGe and CMOS Technology.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Millimeter-wave Wafer-Scale Phased Arrays and Wireless Communication Circuits and Systems in SiGe and CMOS Technology./
Author:	Shin, Woorim.
Description:	112 p.
Notes:	Source: Dissertation Abstracts International, Volume: 74-10(E), Section: B.
Contained By:	Dissertation Abstracts International74-10B(E).
Subject:	Engineering, General. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3564456
ISBN:	9781303133268

Millimeter-wave Wafer-Scale Phased Arrays and Wireless Communication Circuits and Systems in SiGe and CMOS Technology.
Shin, Woorim.

Millimeter-wave Wafer-Scale Phased Arrays and Wireless Communication Circuits and Systems in SiGe and CMOS Technology. - 112 p.

Source: Dissertation Abstracts International, Volume: 74-10(E), Section: B.

Thesis (Ph.D.)--University of California, San Diego, 2013.

This thesis presents a W-band wafer-scale phased array transmitter with high efficiency on-chip antennas. The 4x4 phased array is based on an RF beamforming architecture with an equiphase distribution network and 2-bit phase shifters placed in every element. The differential on-chip antennas are implemented using a 100 mum thick quartz superstrate and have an efficiency of &sim;45% at 110 GHz. The use of electromagnetically coupled antenna leads to wafer-scale phased array concept with simple integration method. The phased array transmitter is implemented in 0.18 um SiGe BiCMOS process, and the measurement shows an array gain of 26.5 dB, pattern directivity of 17.0 dBi, maximum EIRP of 23-25 dBm at 108-114 GHz. The direct pattern measurement from the phased array transmitter shows beam steering capabilities up to plus/minus 30 deg. in two orthogonal directions. This is the first demonstration of wafer-scale phased array in silicon technology.

ISBN: 9781303133268Subjects--Topical Terms:

1020744
Engineering, General.

Millimeter-wave Wafer-Scale Phased Arrays and Wireless Communication Circuits and Systems in SiGe and CMOS Technology.
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005 20141010092806.5
008 150210s2013 ||||||||||||||||| ||eng d
020 $a 9781303133268
035 $a (MiAaPQ)AAI3564456
035 $a AAI3564456
040 $a MiAaPQ $c MiAaPQ
100 1 $a Shin, Woorim. $3 2101208
245 1 0 $a Millimeter-wave Wafer-Scale Phased Arrays and Wireless Communication Circuits and Systems in SiGe and CMOS Technology.
300 $a 112 p.
500 $a Source: Dissertation Abstracts International, Volume: 74-10(E), Section: B.
500 $a Adviser: Gabriel M. Rebeiz.
502 $a Thesis (Ph.D.)--University of California, San Diego, 2013.
520 $a This thesis presents a W-band wafer-scale phased array transmitter with high efficiency on-chip antennas. The 4x4 phased array is based on an RF beamforming architecture with an equiphase distribution network and 2-bit phase shifters placed in every element. The differential on-chip antennas are implemented using a 100 mum thick quartz superstrate and have an efficiency of &sim;45% at 110 GHz. The use of electromagnetically coupled antenna leads to wafer-scale phased array concept with simple integration method. The phased array transmitter is implemented in 0.18 um SiGe BiCMOS process, and the measurement shows an array gain of 26.5 dB, pattern directivity of 17.0 dBi, maximum EIRP of 23-25 dBm at 108-114 GHz. The direct pattern measurement from the phased array transmitter shows beam steering capabilities up to plus/minus 30 deg. in two orthogonal directions. This is the first demonstration of wafer-scale phased array in silicon technology.
520 $a Millimeter-wave circuit components in 45nm SOI CMOS technology are also presented. Transmission-line based D-band common-source and cascode amplifers are designed with the peak gain of 8.7 dB at 147 GHz and 6.1 dB at 171 GHz, respectively. The experimental characterization of the technology shows that on-chip passive elements has low-quality factor, and it can offset performance advantage of the active devices. A 60 GHz active phased shifter with quadrature all-pass filter shows -4 dB insertion gain with <1.5 dB RMS gain error and <10 deg RMS phase error. An analysis shows the asymmetric loading to the all-pass filter can induce more phase error, and the use of series resistor is used as a mitigation.
520 $a Also, an OOK transmitter in 90nm CMOS technology is presented. The OOK transmitter consists of a 30 GHz VCO, a resistive coupler, a frequency doubler, an OOK modulator based on a cascode amplifier, and a medium power amplifier. A single-ended architecture results in simple low-power implementation of a transmitter, and an output OOK spectrum up to Gbps range is observed, demonstrating OOK modulation scheme is suitable for low-power point-to-point high data-rate communication link in millimeterwave frequencies.
590 $a School code: 0033.
650 4 $a Engineering, General. $3 1020744
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0537
690 $a 0544
710 2 $a University of California, San Diego. $b Electrical Engineering (Electronic Circuits and Systems). $3 1669432
773 0 $t Dissertation Abstracts International $g 74-10B(E).
790 $a 0033
791 $a Ph.D.
792 $a 2013
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3564456