東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Novel approaches for wide band gap s...

Montgomery, Kyle H.

Linked to FindBook

Google Book

Amazon

博客來

Novel approaches for wide band gap solar cells.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Novel approaches for wide band gap solar cells./
Author:	Montgomery, Kyle H.
Description:	117 p.
Notes:	Source: Dissertation Abstracts International, Volume: 74-03(E), Section: B.
Contained By:	Dissertation Abstracts International74-03B(E).
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3544310
ISBN:	9781267745880

Novel approaches for wide band gap solar cells.
Montgomery, Kyle H.

Novel approaches for wide band gap solar cells. - 117 p.

Source: Dissertation Abstracts International, Volume: 74-03(E), Section: B.

Thesis (Ph.D.)--Purdue University, 2012.

Multijunction solar cells consisting of three, series-connected, p-n junctions represent the state-of-the-art in high efficiency solar cells, with record conversion efficiencies reaching >42% under concentrated sunlight. In the next step towards reaching ultra-high efficiencies of >50%, more junctions can be added. A model has been developed which shows optimized 4+ junction devices need a top subcell with a band gap of 2 to 2.2 eV. Due to several limiting factors, including lattice matching, compatibility with current-generation technologies, and doping limitations, few options are currently available for this wide band gap solar cell. In this work, novel approaches to deal with this problem were developed. First, while GaP has the potential for growth on low-cost Si substrates, it has typically been plagued by high surface recombination and low minority carrier lifetimes. A method was developed to improve the latter, by gettering in an Al-Ga melt at 975°C, resulting in a near doubling of the quantum efficiency across a range of wavelengths. Second, the heterovalent alloy ZnSe-GaAs was investigated both by LPE growth of the physical alloy and a superlattice-based "digital alloy.'' Given that ZnSe, a direct band gap material with a band gap of 2.67 eV, is lattice-matched to GaAs, with a band gap of 1.42 eV, a ZnSe-GaAs alloy has the potential to be engineered with the desired band gap and grown with minimal dislocations. Third, the metal-insulator-semiconductor (MIS) solar cell was revisited with particular focus on use with III-V materials. For this study, the application to Al/p-GaAs Schottky diodes was explored, resulting in a barrier height approaching 1 eV.

ISBN: 9781267745880Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Novel approaches for wide band gap solar cells.
LDR:02554nam a2200289 4500 001 1958459
005 20140421080357.5
008 150210s2012 ||||||||||||||||| ||eng d
020 $a 9781267745880
035 $a (MiAaPQ)AAI3544310
035 $a AAI3544310
040 $a MiAaPQ $c MiAaPQ
100 1 $a Montgomery, Kyle H. $3 2093550
245 1 0 $a Novel approaches for wide band gap solar cells.
300 $a 117 p.
500 $a Source: Dissertation Abstracts International, Volume: 74-03(E), Section: B.
500 $a Adviser: Jerry M. Woodall.
502 $a Thesis (Ph.D.)--Purdue University, 2012.
520 $a Multijunction solar cells consisting of three, series-connected, p-n junctions represent the state-of-the-art in high efficiency solar cells, with record conversion efficiencies reaching >42% under concentrated sunlight. In the next step towards reaching ultra-high efficiencies of >50%, more junctions can be added. A model has been developed which shows optimized 4+ junction devices need a top subcell with a band gap of 2 to 2.2 eV. Due to several limiting factors, including lattice matching, compatibility with current-generation technologies, and doping limitations, few options are currently available for this wide band gap solar cell. In this work, novel approaches to deal with this problem were developed. First, while GaP has the potential for growth on low-cost Si substrates, it has typically been plagued by high surface recombination and low minority carrier lifetimes. A method was developed to improve the latter, by gettering in an Al-Ga melt at 975°C, resulting in a near doubling of the quantum efficiency across a range of wavelengths. Second, the heterovalent alloy ZnSe-GaAs was investigated both by LPE growth of the physical alloy and a superlattice-based "digital alloy.'' Given that ZnSe, a direct band gap material with a band gap of 2.67 eV, is lattice-matched to GaAs, with a band gap of 1.42 eV, a ZnSe-GaAs alloy has the potential to be engineered with the desired band gap and grown with minimal dislocations. Third, the metal-insulator-semiconductor (MIS) solar cell was revisited with particular focus on use with III-V materials. For this study, the application to Al/p-GaAs Schottky diodes was explored, resulting in a barrier height approaching 1 eV.
590 $a School code: 0183.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Alternative Energy. $3 1035473
690 $a 0544
690 $a 0794
690 $a 0363
710 2 $a Purdue University. $b Electrical and Computer Engineering. $3 1018497
773 0 $t Dissertation Abstracts International $g 74-03B(E).
790 $a 0183
791 $a Ph.D.
792 $a 2012
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3544310