東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Semiconductor-to-metal Transition Co...

Gupta, Alok.

Linked to FindBook

Google Book

Amazon

博客來

Semiconductor-to-metal Transition Control in Novel Vanadium Dioxide/Silicon and Vanadium Dioxide/Sapphire Epitaxial Thin Film Heterostructures for Device Applications.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Semiconductor-to-metal Transition Control in Novel Vanadium Dioxide/Silicon and Vanadium Dioxide/Sapphire Epitaxial Thin Film Heterostructures for Device Applications./
Author:	Gupta, Alok.
Description:	192 p.
Notes:	Source: Dissertation Abstracts International, Volume: 73-05, Section: B, page: 3192.
Contained By:	Dissertation Abstracts International73-05B.
Subject:	Engineering, Materials Science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3497247
ISBN:	9781267177735

Semiconductor-to-metal Transition Control in Novel Vanadium Dioxide/Silicon and Vanadium Dioxide/Sapphire Epitaxial Thin Film Heterostructures for Device Applications.
Gupta, Alok.

Semiconductor-to-metal Transition Control in Novel Vanadium Dioxide/Silicon and Vanadium Dioxide/Sapphire Epitaxial Thin Film Heterostructures for Device Applications. - 192 p.

Source: Dissertation Abstracts International, Volume: 73-05, Section: B, page: 3192.

Thesis (Ph.D.)--North Carolina State University, 2011.

Novel functionalities of Vanadium dioxide (VO2), such as, several orders of magnitude transition in resistivity and IR transmittance, provide an exciting opportunity for the development of next generation memory, sensor, and field-effect based devices. A critical issue in the development of practical devices based on metal oxides is the integration of high quality epitaxial oxide thin films with the existing silicon technology which is based on silicon (100) substrates. However, silicon is not suitable for epitaxial growth of oxides owing to its tendency to readily form an amorphous oxide layer or silicide at the film-substrate interface. The oxide films deposited directly on silicon exhibit poor crystallinity and are not suitable for device applications. To overcome this challenge, appropriate substrate templates must be developed for the growth of oxide thin films on silicon substrates.

ISBN: 9781267177735Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Semiconductor-to-metal Transition Control in Novel Vanadium Dioxide/Silicon and Vanadium Dioxide/Sapphire Epitaxial Thin Film Heterostructures for Device Applications.
LDR:05158nam a2200313 4500 001 1958442
005 20140421080353.5
008 150210s2011 ||||||||||||||||| ||eng d
020 $a 9781267177735
035 $a (MiAaPQ)AAI3497247
035 $a AAI3497247
040 $a MiAaPQ $c MiAaPQ
100 1 $a Gupta, Alok. $3 2093532
245 1 0 $a Semiconductor-to-metal Transition Control in Novel Vanadium Dioxide/Silicon and Vanadium Dioxide/Sapphire Epitaxial Thin Film Heterostructures for Device Applications.
300 $a 192 p.
500 $a Source: Dissertation Abstracts International, Volume: 73-05, Section: B, page: 3192.
500 $a Adviser: Jagdish Narayan.
502 $a Thesis (Ph.D.)--North Carolina State University, 2011.
520 $a Novel functionalities of Vanadium dioxide (VO2), such as, several orders of magnitude transition in resistivity and IR transmittance, provide an exciting opportunity for the development of next generation memory, sensor, and field-effect based devices. A critical issue in the development of practical devices based on metal oxides is the integration of high quality epitaxial oxide thin films with the existing silicon technology which is based on silicon (100) substrates. However, silicon is not suitable for epitaxial growth of oxides owing to its tendency to readily form an amorphous oxide layer or silicide at the film-substrate interface. The oxide films deposited directly on silicon exhibit poor crystallinity and are not suitable for device applications. To overcome this challenge, appropriate substrate templates must be developed for the growth of oxide thin films on silicon substrates.
520 $a The primary objective of this dissertation was to develop an integration methodology of VO2 with Si (100) substrates so they could be used in "smart" sensor type of devices along with other multifunctional devices on the same silicon chip. This was achieved by using yttria-stabilized zirconia (YSZ) template layer deposited in situ. It will be shown that if the deposition conditions are controlled properly, YSZ can be grown epitaxially on silicon substrates even if the native oxide is not etched completely prior to deposition. I have used this approach to integrate VO2 thin films with Si (100) substrates using pulsed laser deposition (PLD) technique. The deposition methodology of integrating VO2 thin films on silicon using various other template layers will also be discussed. The detailed x-ray diffraction, transmission electron microscopy (TEM), electrical characterization results for the deposited films will be presented. In the framework on domain matching epitaxy, epitaxial growth of VO2 (tetragonal crystal structure at growth temperature) on both tetragonal and cubic YSZ has been explained. Our detailed phi-scan X-ray diffraction measurements corroborate our understanding of the epitaxial growth and in-plane atomic arrangements at the interface. It was observed that the transition characteristics (sharpness, over which electrical and optical property changes are completed, amplitude, transition temperature, and hysteresis) are a strong function of microstructure, strain, and stoichiometry. We have shown that by choosing the right template layer, strain in the VO2 thin films can be fully relaxed and near-bulk VO2 transition temperatures can be achieved. We have demonstrated this by using NiO as a buffer layer on Al2O3 (0001) substrate.
520 $a We have also used swift heavy ion irradiation to induce controlled modifications in the semiconductor-to-metal transition characteristics of VO2 single-crystal thin films with varying ion fluences. At very high energies of ions (200 MeV), the electronic stopping (&sim;2009 eV/A) dominates over nuclear stopping (&sim;16 eV/A). Under these extreme electronic excitation conditions caused by electronic stopping and the passage of swift heavy ions through the entire thickness of the film, we expect creation of certain unique type of defects and disordered regions. Detailed characterization using X-ray diffraction, Raman spectroscopy, infra-red transmission spectroscopy, x-ray photoelectron spectroscopy (XPS), and electrical measurements were performed to investigate the characteristics and role of these defects on structural, optical, and electrical properties of VO2 thin films. XPS andelectrical resistivity measurements suggest that the ion-irradiation induces localized defect states which appear to correlate well with the creation of disordered regions in the VO2 thin films. The high energy heavy ion-irradiation changes the transition characteristics drastically from a first-order to a second-order transition (electronic -- Mott type). The low temperature conductance data for these ion-irradiated films fits well with the quasi-amorphous model for resistivity of VO2 where ion-irradiation is believed to create mid band-gap defect states.
590 $a School code: 0155.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Physics, Condensed Matter. $3 1018743
650 4 $a Nanotechnology. $3 526235
690 $a 0794
690 $a 0611
690 $a 0652
710 2 $a North Carolina State University. $3 1018772
773 0 $t Dissertation Abstracts International $g 73-05B.
790 $a 0155
791 $a Ph.D.
792 $a 2011
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3497247