東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Device physics of Correlated Electro...

Xue, Kanhao.

FindBook

Google Book

Amazon

博客來

Device physics of Correlated Electron Random Access Memory.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Device physics of Correlated Electron Random Access Memory./
作者:	Xue, Kanhao.
面頁冊數:	195 p.
附註:	Source: Dissertation Abstracts International, Volume: 71-05, Section: B, page: 3269.
Contained By:	Dissertation Abstracts International71-05B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3407315
ISBN:	9781109759549

Device physics of Correlated Electron Random Access Memory.
Xue, Kanhao.

Device physics of Correlated Electron Random Access Memory. - 195 p.

Source: Dissertation Abstracts International, Volume: 71-05, Section: B, page: 3269.

Thesis (Ph.D.)--University of Colorado at Colorado Springs, 2010.

Correlated Electron Random Access Memory (CeRAM) is a particular transition metal oxide (TMO) based Resistance Random Access Memory (RRAM) that does not involve electroforming and exhibits reliable unipolar resistance switching properties. A physical model of NiO based CeRAM/RRAM is proposed in the present work.

ISBN: 9781109759549Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Device physics of Correlated Electron Random Access Memory.
LDR:03142nam a2200325 4500 001 1958435
005 20140421080351.5
008 150210s2010 ||||||||||||||||| ||eng d
020 $a 9781109759549
035 $a (MiAaPQ)AAI3407315
035 $a AAI3407315
040 $a MiAaPQ $c MiAaPQ
100 1 $a Xue, Kanhao. $3 2093525
245 1 0 $a Device physics of Correlated Electron Random Access Memory.
300 $a 195 p.
500 $a Source: Dissertation Abstracts International, Volume: 71-05, Section: B, page: 3269.
500 $a Adviser: Carlos A. Paz de Araujo.
502 $a Thesis (Ph.D.)--University of Colorado at Colorado Springs, 2010.
520 $a Correlated Electron Random Access Memory (CeRAM) is a particular transition metal oxide (TMO) based Resistance Random Access Memory (RRAM) that does not involve electroforming and exhibits reliable unipolar resistance switching properties. A physical model of NiO based CeRAM/RRAM is proposed in the present work.
520 $a The two stable resistance states in NiO are attributed to intrinsic metallic and insulating states of the material, rather than the creation and rupture of filaments. Mott transition theory and the Hubbard model have been reviewed in details. By incorporating the long range Coulomb interactions (screening effects) we demonstrate that a high free electron concentration may lead to a metallic NiO. An effective Hubbard U has been proposed as an ansatz and the first order insulator-to-metal (SET) and metal-to-insulator (RESET) transitions in NiO are well understood within the new picture.
520 $a Transport in CeRAM involves quantum mechanical effects as well as electron correlation and phase transition. Analytical current-voltage formulae for CeRAM are given both on the metal and insulator sides by putting the appropriate solutions of the modified Hubbard model into the mesoscopic Meir-Wingreen transport equation. The RESET phenomenon is explained by a sufficient separation of Fermi levels in the electrodes and hence a Mott transition can be triggered in the anodic region of NiO due to a lack of electrons. The SET behavior originates from a tunneling current which removes the insulating region near the anode.
520 $a Several experimental evidences, either in the literature or from our own results, are presented to support this model. That the insulating region in NiO RRAM is near the anode has been confirmed separately by TEM inspection and sputtering damage experiments. The RESET mechanism has been bolstered by the fact that VRESET is very stable while IRESET is prone to dispersion. On the other hand, the strong dispersion of VSET and its film thickness independent nature once more validate our inference of a small insulating region in the OFF state. Last but not least, electroforming phenomena in other NiO RRAMs could also be well explained by this model.
590 $a School code: 0892.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Physics, Condensed Matter. $3 1018743
650 4 $a Physics, Quantum. $3 1671062
690 $a 0544
690 $a 0611
690 $a 0599
710 2 $a University of Colorado at Colorado Springs. $3 1024084
773 0 $t Dissertation Abstracts International $g 71-05B.
790 $a 0892
791 $a Ph.D.
792 $a 2010
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3407315