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Local area mask patterning of extrem...

Lyons, Adam.

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Local area mask patterning of extreme ultraviolet lithography reticles for native defect analysis.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Local area mask patterning of extreme ultraviolet lithography reticles for native defect analysis./
作者:	Lyons, Adam.
面頁冊數:	168 p.
附註:	Source: Dissertation Abstracts International, Volume: 74-09(E), Section: B.
Contained By:	Dissertation Abstracts International74-09B(E).
標題:	Engineering, General. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3561811
ISBN:	9781303091728

Local area mask patterning of extreme ultraviolet lithography reticles for native defect analysis.
Lyons, Adam.

Local area mask patterning of extreme ultraviolet lithography reticles for native defect analysis. - 168 p.

Source: Dissertation Abstracts International, Volume: 74-09(E), Section: B.

Thesis (Ph.D.)--State University of New York at Albany, 2013.

Understanding the nature and behavior of native defects on EUV reticles, particularly their printability, is of critical importance to the successful implementation of EUV lithography for high volume manufacturing, as will be demonstrated in the upcoming chapters. Previous defect characterization work has focused on the examination of programmed defects, native defects on blank reticles, and unaligned native defects on patterned reticles. Each of these approaches has drawbacks, which will be discussed in detail, and the aim of this research is to address these deficiencies by developing a method to pattern features of interest over native defects, enabling the direct observation of their effect on lithography.

ISBN: 9781303091728Subjects--Topical Terms:

1020744
Engineering, General.

Local area mask patterning of extreme ultraviolet lithography reticles for native defect analysis.
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245 1 0 $a Local area mask patterning of extreme ultraviolet lithography reticles for native defect analysis.
300 $a 168 p.
500 $a Source: Dissertation Abstracts International, Volume: 74-09(E), Section: B.
500 $a Adviser: John Hartley.
502 $a Thesis (Ph.D.)--State University of New York at Albany, 2013.
520 $a Understanding the nature and behavior of native defects on EUV reticles, particularly their printability, is of critical importance to the successful implementation of EUV lithography for high volume manufacturing, as will be demonstrated in the upcoming chapters. Previous defect characterization work has focused on the examination of programmed defects, native defects on blank reticles, and unaligned native defects on patterned reticles. Each of these approaches has drawbacks, which will be discussed in detail, and the aim of this research is to address these deficiencies by developing a method to pattern features of interest over native defects, enabling the direct observation of their effect on lithography.
520 $a The development of this Local Area Mask Patterning, or LAMP process, posed significant challenges, each of which are discussed in detail in the following chapters. Chapter 1 describes the history of semiconductor lithography and how EUV lithography came to be the leading candidate for the manufacture of future technology nodes. Chapter 2 describes EUV technology in more detail, presenting some of the major challenges facing its implementation, and how the LAMP project can contribute to their solution. Since electron beam lithography is used to create reticles for the LAMP project, an overview of this technology is provided in Chapter 3 below. After the reticle has been patterned using EBL, the pattern must be transferred to the absorber layer, and Chapter 4 describes a method developed for absorber patterning using a bench-top lift-off lithography technique. The major disadvantage of using lift-off lithography is the tendency of the process to re-deposit absorber particles across the reticle surface, and there is no tool available at CNSE to perform patterned reticle defect inspection. To address this need the functionality of the VB300 was extended to allow the inspection of the patterned reticle using the VB300 backscatter electron SEM imaging capability. The development of this functionality and an analysis of its effectiveness are detailed in Chapter 5. If the effect of the targeted defect on lithography is to be accurately gauged then the line-width of the pattern must be well controlled. To this end proximity effect correction (PEC) parameters for the EUV reticles were determined using a method described in Chapter 6.
520 $a Each of the challenges of lithography, lift-off process development, defect inspection and PEC were successfully overcome in the course of this study, and Chapter 7 presents the results of exposures on the AIT and MET showing aligned-to-defect EUV lithography.
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710 2 $a State University of New York at Albany. $b Nanoscale Science and Engineering-Nanoscale Engineering. $3 1674751
773 0 $t Dissertation Abstracts International $g 74-09B(E).
790 1 0 $a Hartley, John, $e advisor
790 1 0 $a Denbeaux, Gregory $e committee member
790 1 0 $a Lifshin, Eric $e committee member
790 1 0 $a Groves, Timothy $e committee member
790 1 0 $a Zhang, Lan $e committee member
790 $a 0668
791 $a Ph.D.
792 $a 2013
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3561811