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Silicon solid state devices and radi...

Leroy, Claude.

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Silicon solid state devices and radiation detection

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Silicon solid state devices and radiation detection/ Claude Leroy.
作者:	Leroy, Claude.
其他作者:	Rancoita, Pier-Giorgio.
出版者:	Singapore :World Scientific Pub. Co., : 2012.,
面頁冊數:	1 online resource (430 p.)
附註:	3.4.1 The Dielectric Relaxation Time and Debye Length.
內容註:	Preface; Contents; 1. Interactions of Charged Particles and Photons; 1.1 Passage of Massive Charged Particles Through Matter; 1.1.1 Collision-Loss Processes of Massive Charged Particles; 1.1.1.1 Maximum Transferable Energy to Atomic Electrons; 1.1.1.2 Bragg Curve and Peak; 1.1.1.3 Energy-Loss Minimum, Density Effect and Relativistic Rise; 1.1.1.4 Restricted Energy-Loss and Fermi Plateau; 1.1.1.5 Energy-Loss Fluctuations and the Most Probable Energy-Loss; 1.1.1.6 Improved Energy-Loss Distribution and Effective Most Probable Energy-Loss; 1.1.1.7 Nuclear Energy-Loss of Massive Particles.
內容註:	1.2 Collision and Radiation Energy-Losses of Electrons and Positrons1.2.1 Collision Losses and the Most Probable Energy-Loss; 1.2.2 Radiation Energy-Losses; 1.3 Nuclear and Non-Ionizing Energy Losses of Electrons; 1.3.1 Scattering Cross Section of Electrons on Nuclei; 1.3.1.1 Interpolated Expression for RMott; 1.3.1.2 Screened Coulomb Potentials; 1.3.1.3 Finite Nuclear Size; 1.3.1.4 Finite Rest Mass of Target Nucleus; 1.3.2 Nuclear Stopping Power of Electrons; 1.3.3 Non-Ionizing Energy-Loss of Electrons; 1.4 Interactions of Photons with Matter; 1.4.1 Photoelectric Effect; 1.4.2 Compton Effect.
內容註:	1.4.3 Pair Production1.4.3.1 Pair Production in Nuclear and Atomic Electron Fields; 1.4.4 Absorption of Photons in Silicon; 2. Physics and Properties of Silicon Semiconductor; 2.1 Structure and Growth of Silicon Crystals; 2.1.1 Imperfections and Defects in Crystals; 2.2 Energy Band Structure and Energy Gap; 2.2.1 Energy Gap Dependence on Temperature and Pressure in Silicon; 2.2.2 Effective Mass; 2.2.2.1 Conductivity and Density-of-States Effective Masses in Silicon; 2.3 Carrier Concentration and Fermi Level; 2.3.1 Effective Density-of-States.
內容註:	2.3.1.1 Degenerate and Non-Degenerate Semiconductors2.3.1.2 Intrinsic Fermi-Level and Concentration of Carriers; 2.3.2 Donors and Acceptors; 2.3.2.1 Extrinsic Semiconductors and Fermi Level; 2.3.2.2 Compensated Semiconductors; 2.3.2.3 Maximum Temperature of Operation of Extrinsic Semiconductors; 2.3.2.4 Quasi-Fermi Levels; 2.3.3 Largely Doped and Degenerate Semiconductors; 2.3.3.1 Bandgap Narrowing in Heavily Doped Semiconductors; 2.3.3.2 Reduction of the Impurity Ionization-Energy in Heavily Doped Semiconductors; 3. Transport Phenomena in Semiconductors.
內容註:	3.1 Thermal and Drift Motion in Semiconductors3.1.1 Drift and Mobility; 3.1.1.1 Mobility in Silicon at High Electric Fields or Up to Large Doping Concentrations; 3.1.2 Resistivity; 3.2 Diffusion Mechanism; 3.2.1 Einstein's Relationship; 3.3 Thermal Equilibrium and Excess Carriers in Semiconductors; 3.3.1 Generation, Recombination Processes, and Carrier Lifetimes; 3.3.1.1 Bulk Processes in Direct Semiconductors; 3.3.1.2 Bulk Processes in Indirect Semiconductors; 3.3.1.3 Surface Recombination; 3.3.1.4 Lifetime of Minority Carriers in Silicon; 3.4 The Continuity Equations.
標題:	Semiconductor nuclear counters - Design and construction. -
電子資源:	http://www.worldscientific.com/worldscibooks/10.1142/8383#t=toc
ISBN:	9789814390057 (electronic bk.)

Silicon solid state devices and radiation detection
Leroy, Claude.

Silicon solid state devices and radiation detection[electronic resource] /Claude Leroy. - Singapore :World Scientific Pub. Co.,2012. - 1 online resource (430 p.)

3.4.1 The Dielectric Relaxation Time and Debye Length.

Preface; Contents; 1. Interactions of Charged Particles and Photons; 1.1 Passage of Massive Charged Particles Through Matter; 1.1.1 Collision-Loss Processes of Massive Charged Particles; 1.1.1.1 Maximum Transferable Energy to Atomic Electrons; 1.1.1.2 Bragg Curve and Peak; 1.1.1.3 Energy-Loss Minimum, Density Effect and Relativistic Rise; 1.1.1.4 Restricted Energy-Loss and Fermi Plateau; 1.1.1.5 Energy-Loss Fluctuations and the Most Probable Energy-Loss; 1.1.1.6 Improved Energy-Loss Distribution and Effective Most Probable Energy-Loss; 1.1.1.7 Nuclear Energy-Loss of Massive Particles.

This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope in the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments, including in outer space and in the medical environment. This book also covers state-of-the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest develo.

ISBN: 9789814390057 (electronic bk.)Subjects--Topical Terms:

2089749
Semiconductor nuclear counters
--Design and construction.

LC Class. No.: QC787.C6 / L619 2012

Dewey Class. No.: 539.20287

Silicon solid state devices and radiation detection
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500 $a 3.4.1 The Dielectric Relaxation Time and Debye Length.
505 0 $a Preface; Contents; 1. Interactions of Charged Particles and Photons; 1.1 Passage of Massive Charged Particles Through Matter; 1.1.1 Collision-Loss Processes of Massive Charged Particles; 1.1.1.1 Maximum Transferable Energy to Atomic Electrons; 1.1.1.2 Bragg Curve and Peak; 1.1.1.3 Energy-Loss Minimum, Density Effect and Relativistic Rise; 1.1.1.4 Restricted Energy-Loss and Fermi Plateau; 1.1.1.5 Energy-Loss Fluctuations and the Most Probable Energy-Loss; 1.1.1.6 Improved Energy-Loss Distribution and Effective Most Probable Energy-Loss; 1.1.1.7 Nuclear Energy-Loss of Massive Particles.
505 8 $a 1.2 Collision and Radiation Energy-Losses of Electrons and Positrons1.2.1 Collision Losses and the Most Probable Energy-Loss; 1.2.2 Radiation Energy-Losses; 1.3 Nuclear and Non-Ionizing Energy Losses of Electrons; 1.3.1 Scattering Cross Section of Electrons on Nuclei; 1.3.1.1 Interpolated Expression for RMott; 1.3.1.2 Screened Coulomb Potentials; 1.3.1.3 Finite Nuclear Size; 1.3.1.4 Finite Rest Mass of Target Nucleus; 1.3.2 Nuclear Stopping Power of Electrons; 1.3.3 Non-Ionizing Energy-Loss of Electrons; 1.4 Interactions of Photons with Matter; 1.4.1 Photoelectric Effect; 1.4.2 Compton Effect.
505 8 $a 1.4.3 Pair Production1.4.3.1 Pair Production in Nuclear and Atomic Electron Fields; 1.4.4 Absorption of Photons in Silicon; 2. Physics and Properties of Silicon Semiconductor; 2.1 Structure and Growth of Silicon Crystals; 2.1.1 Imperfections and Defects in Crystals; 2.2 Energy Band Structure and Energy Gap; 2.2.1 Energy Gap Dependence on Temperature and Pressure in Silicon; 2.2.2 Effective Mass; 2.2.2.1 Conductivity and Density-of-States Effective Masses in Silicon; 2.3 Carrier Concentration and Fermi Level; 2.3.1 Effective Density-of-States.
505 8 $a 2.3.1.1 Degenerate and Non-Degenerate Semiconductors2.3.1.2 Intrinsic Fermi-Level and Concentration of Carriers; 2.3.2 Donors and Acceptors; 2.3.2.1 Extrinsic Semiconductors and Fermi Level; 2.3.2.2 Compensated Semiconductors; 2.3.2.3 Maximum Temperature of Operation of Extrinsic Semiconductors; 2.3.2.4 Quasi-Fermi Levels; 2.3.3 Largely Doped and Degenerate Semiconductors; 2.3.3.1 Bandgap Narrowing in Heavily Doped Semiconductors; 2.3.3.2 Reduction of the Impurity Ionization-Energy in Heavily Doped Semiconductors; 3. Transport Phenomena in Semiconductors.
505 8 $a 3.1 Thermal and Drift Motion in Semiconductors3.1.1 Drift and Mobility; 3.1.1.1 Mobility in Silicon at High Electric Fields or Up to Large Doping Concentrations; 3.1.2 Resistivity; 3.2 Diffusion Mechanism; 3.2.1 Einstein's Relationship; 3.3 Thermal Equilibrium and Excess Carriers in Semiconductors; 3.3.1 Generation, Recombination Processes, and Carrier Lifetimes; 3.3.1.1 Bulk Processes in Direct Semiconductors; 3.3.1.2 Bulk Processes in Indirect Semiconductors; 3.3.1.3 Surface Recombination; 3.3.1.4 Lifetime of Minority Carriers in Silicon; 3.4 The Continuity Equations.
520 $a This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope in the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments, including in outer space and in the medical environment. This book also covers state-of-the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest develo.
588 0 $a Print version record.
650 0 $a Semiconductor nuclear counters $x Design and construction. $3 2089749
650 0 $a Semiconductor nuclear counters $x Materials. $3 2089750
650 0 $a Silicon carbide. $3 827236
700 1 $a Rancoita, Pier-Giorgio. $3 2089748
856 4 0 $u http://www.worldscientific.com/worldscibooks/10.1142/8383#t=toc