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The formation of copper(x) tin(y) in...

Aggarwal, Indu.

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The formation of copper(x) tin(y) intermetallic compounds in controlled collapse chip connection (C4).

Record Type:	Electronic resources : Monograph/item
Title/Author:	The formation of copper(x) tin(y) intermetallic compounds in controlled collapse chip connection (C4)./
Author:	Aggarwal, Indu.
Description:	111 p.
Notes:	Source: Masters Abstracts International, Volume: 33-02, page: 0625.
Contained By:	Masters Abstracts International33-02.
Subject:	Engineering, Materials Science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1359002

The formation of copper(x) tin(y) intermetallic compounds in controlled collapse chip connection (C4).
Aggarwal, Indu.

The formation of copper(x) tin(y) intermetallic compounds in controlled collapse chip connection (C4). - 111 p.

Source: Masters Abstracts International, Volume: 33-02, page: 0625.

Thesis (M.S.)--San Jose State University, 1994.

The type of intermetallic compounds that are formed, by varying the Cu and Sn concentration during Controlled Collapse Chip Connections (C4) processing were studied. C4 samples for this study were prepared on silicon wafers by depositing layers of Cr-Cu-Au and 5%Sn-95%Pb solder followed by a reflow cycle at 350Subjects--Topical Terms:

1017759
Engineering, Materials Science.

The formation of copper(x) tin(y) intermetallic compounds in controlled collapse chip connection (C4).
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245 1 4 $a The formation of copper(x) tin(y) intermetallic compounds in controlled collapse chip connection (C4).
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502 $a Thesis (M.S.)--San Jose State University, 1994.
520 $a The type of intermetallic compounds that are formed, by varying the Cu and Sn concentration during Controlled Collapse Chip Connections (C4) processing were studied. C4 samples for this study were prepared on silicon wafers by depositing layers of Cr-Cu-Au and 5%Sn-95%Pb solder followed by a reflow cycle at 350 $\ sp\circ
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