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Characterization of a Keggin polyoxo...

Teague, Craig Matthew.

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Characterization of a Keggin polyoxometalate on metal and semiconductor surfaces.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Characterization of a Keggin polyoxometalate on metal and semiconductor surfaces./
Author:	Teague, Craig Matthew.
Description:	204 p.
Notes:	Source: Dissertation Abstracts International, Volume: 64-08, Section: B, page: 3821.
Contained By:	Dissertation Abstracts International64-08B.
Subject:	Chemistry, Inorganic. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3101978

Characterization of a Keggin polyoxometalate on metal and semiconductor surfaces.
Teague, Craig Matthew.

Characterization of a Keggin polyoxometalate on metal and semiconductor surfaces. - 204 p.

Source: Dissertation Abstracts International, Volume: 64-08, Section: B, page: 3821.

Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.

This thesis contains studies relating to the interaction between a Keggin polyoxometalate, alpha-[SiW12O40]4-, and surfaces including Ag, Au, and Si.Subjects--Topical Terms:

517253
Chemistry, Inorganic.

Characterization of a Keggin polyoxometalate on metal and semiconductor surfaces.
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008 130614s2003 eng d
035 $a (UnM)AAI3101978
035 $a AAI3101978
040 $a UnM $c UnM
100 1 $a Teague, Craig Matthew. $3 1952752
245 1 0 $a Characterization of a Keggin polyoxometalate on metal and semiconductor surfaces.
300 $a 204 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-08, Section: B, page: 3821.
500 $a Adviser: Andrew A. Gewirth.
502 $a Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.
520 $a This thesis contains studies relating to the interaction between a Keggin polyoxometalate, alpha-[SiW12O40]4-, and surfaces including Ag, Au, and Si.
520 $a First, electrochemical scanning tunneling microscopy is utilized in a specific way to obtain information regarding a monolayer of alpha-[SiW 12O40]4- on Ag(111). The information obtained is on the nanometer size scale while also being time resolved on the millisecond time scale. At a qualitative level, behavior of individual alpha-[SiW 12O40]4- molecules is observed within and at the edge of the monolayer. Furthermore, quantitative information is obtained by analyzing step edge and island edge positions. These results show that alpha-[SiW12O40]4- is substantially less mobile on the surface than are Ag atoms in the absence of the monolayer. In addition, the potential dependence of the surface motion is essentially the opposite with a alpha-[SiW12O40]4- monolayer present relative to the monolayer free case. The alpha-[SiW 12O40]4- molecules exhibit increased motion at more negative potentials.
520 $a Second, surface sensitive vibrational spectroscopies are utilized to elucidate details of the strong interaction between alpha-[SiW12O 40]4- and Ag surfaces. Assignment of vibrational modes yields valuable information regarding the nature of the surface interactions, particularly as the potential is varied. The results indicate that vibrational modes arising primarily from different parts of the molecule exhibit different potential dependent behaviors. These results are also correlated to electrochemical results which show peculiar behavior for alpha-[SiW12O40 ]4- on Ag surfaces. Notably, these results indicate that the interaction of alpha-[SiW12O40]4- with Au surfaces is substantially different than the interaction of alpha-[SiW12O40]4- on Ag surfaces.
520 $a Finally, studies of alpha-[SiW12O40]4- on Si surfaces are undertaken. In the first route, the Si surface is derivatized with a multicationic layer and alpha-[SiW12O 40]4- is assembled on this layer via electrostatic attraction. Characterization of this layer indicates that there is a substantial amount of alpha-[SiW12O40]4- present on the surface and that the molecule is intact. In the second route, the Si surface is etched and then reacted with alpha-[SiW12O 40]4-, with the goal being covalent attachment of alpha-[SiW12O40]4- directly to the Si surface. Utilizing a specific deposition scheme, the results show that alpha-[SiW12O40]4- is likely present on the surface as a very thin layer.
590 $a School code: 0090.
650 4 $a Chemistry, Inorganic. $3 517253
650 4 $a Chemistry, Physical. $3 560527
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0488
690 $a 0494
690 $a 0794
710 2 0 $a University of Illinois at Urbana-Champaign. $3 626646
773 0 $t Dissertation Abstracts International $g 64-08B.
790 1 0 $a Gewirth, Andrew A., $e advisor
790 $a 0090
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3101978