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Finite element modeling for dislocat...

Zhu, Xinai.

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Finite element modeling for dislocation generation in semiconductor crystals grown from the melt.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Finite element modeling for dislocation generation in semiconductor crystals grown from the melt./
Author:	Zhu, Xinai.
Description:	160 p.
Notes:	Source: Dissertation Abstracts International, Volume: 65-01, Section: B, page: 0415.
Contained By:	Dissertation Abstracts International65-01B.
Subject:	Engineering, Mechanical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3119998

Finite element modeling for dislocation generation in semiconductor crystals grown from the melt.
Zhu, Xinai.

Finite element modeling for dislocation generation in semiconductor crystals grown from the melt. - 160 p.

Source: Dissertation Abstracts International, Volume: 65-01, Section: B, page: 0415.

Thesis (Ph.D.)--Florida Atlantic University, 2004.

Dislocations in Gallium Arsenide (GaAs) and Indium Phosphide (InP) single crystals are generated by excessive stresses that are induced during the crystal growth process, and the fabrication and packaging of microelectronic devices/circuits. TheSubjects--Topical Terms:

783786
Engineering, Mechanical.

Finite element modeling for dislocation generation in semiconductor crystals grown from the melt.
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100 1 $a Zhu, Xinai. $3 1950240
245 1 0 $a Finite element modeling for dislocation generation in semiconductor crystals grown from the melt.
300 $a 160 p.
500 $a Source: Dissertation Abstracts International, Volume: 65-01, Section: B, page: 0415.
500 $a Adviser: Chi-Tay Tsai.
502 $a Thesis (Ph.D.)--Florida Atlantic University, 2004.
520 $a Dislocations in Gallium Arsenide (GaAs) and Indium Phosphide (InP) single crystals are generated by excessive stresses that are induced during the crystal growth process, and the fabrication and packaging of microelectronic devices/circuits. The
520 $a GaAs and InP single crystals grown by the vertical gradient freeze (VGF) process were adopted as examples to study the influences of doping impurity and growth parameters on dislocations generated in these grown crystal. The calculated results s
590 $a School code: 0119.
650 4 $a Engineering, Mechanical. $3 783786
650 4 $a Applied Mechanics. $3 1018410
650 4 $a Engineering, Materials Science. $3 1017759
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710 2 0 $a Florida Atlantic University. $3 1017837
773 0 $t Dissertation Abstracts International $g 65-01B.
790 1 0 $a Tsai, Chi-Tay, $e advisor
790 $a 0119
791 $a Ph.D.
792 $a 2004
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3119998