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Reliability characterizations and fa...

Wang, Bin.

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Reliability characterizations and failure mechanism of ultra-thin oxides for MOS devices.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Reliability characterizations and failure mechanism of ultra-thin oxides for MOS devices./
作者:	Wang, Bin.
面頁冊數:	150 p.
附註:	Source: Dissertation Abstracts International, Volume: 62-12, Section: B, page: 5912.
Contained By:	Dissertation Abstracts International62-12B.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3035832
ISBN:	0493489347

Reliability characterizations and failure mechanism of ultra-thin oxides for MOS devices.
Wang, Bin.

Reliability characterizations and failure mechanism of ultra-thin oxides for MOS devices. - 150 p.

Source: Dissertation Abstracts International, Volume: 62-12, Section: B, page: 5912.

Thesis (Ph.D.)--University of Maryland College Park, 2001.

The aggressive scaling of smaller/faster logic and memory devices demands accurate reliability characterization and knowledge of the failure mechanisms of ultra-thin (<30 A) silicon dioxide (SiO 2) layers in the gates of metal-oxide semiconductor (MOS) structures. The increased occurrence of soft breakdown in ultra-thin oxide films necessitates the development of more sophisticated techniques to detect breakdown. One such technique is by interrupting stress and monitoring stress-induced leakage current (SILC) or interface state density (Dit). The effect of interrupting stress was carefully studied and determined not to affect device lifetime. A comprehensive time-dependent dielectric breakdown (TDDB) study was conducted on ultra-thin oxide over a temperature ranging from 220°C to 350°C to study temperature acceleration. The results of the study showed that both hard and soft breakdown modes exhibit the same temperature dependence.

ISBN: 0493489347Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Reliability characterizations and failure mechanism of ultra-thin oxides for MOS devices.
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245 1 0 $a Reliability characterizations and failure mechanism of ultra-thin oxides for MOS devices.
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500 $a Source: Dissertation Abstracts International, Volume: 62-12, Section: B, page: 5912.
500 $a Chair: Joseph B. Bernstein.
502 $a Thesis (Ph.D.)--University of Maryland College Park, 2001.
520 $a The aggressive scaling of smaller/faster logic and memory devices demands accurate reliability characterization and knowledge of the failure mechanisms of ultra-thin (<30 A) silicon dioxide (SiO 2) layers in the gates of metal-oxide semiconductor (MOS) structures. The increased occurrence of soft breakdown in ultra-thin oxide films necessitates the development of more sophisticated techniques to detect breakdown. One such technique is by interrupting stress and monitoring stress-induced leakage current (SILC) or interface state density (Dit). The effect of interrupting stress was carefully studied and determined not to affect device lifetime. A comprehensive time-dependent dielectric breakdown (TDDB) study was conducted on ultra-thin oxide over a temperature ranging from 220°C to 350°C to study temperature acceleration. The results of the study showed that both hard and soft breakdown modes exhibit the same temperature dependence.
520 $a The choice of a failure model for time/charge to breakdown (tBD /QBD) is critical for accurate reliability extrapolation. In this work, two more experiments were carried out to clarify the current physical mechanisms responsible to dielectric wear-out. The first experiment investigated the effects of pulsed biased stress on device lifetime. A lifetime enhancement under bipolar pulse stress was observed. The results suggest that previously proposed mechanism of hole de-trapping in thick oxide may not be responsible for the lifetime increase observed here for ultra-thin oxides. The second experiment studied the effects of heavy ion on the reliability of ultra-thin SiO2. Annealing and electron injection experiments on irradiated devices with heavy ion implied that holes were significantly created and trapped inside SiO2 without causing the SiO2 to breakdown. The results from these two studies suggest that breakdown of ultra-thin oxides is not caused by holes and that the anode hole injection (AHI) model for constant voltage stress (CVS) is unwarranted in the ultra-thin regime.
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