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Heterostructures interface effects o...

Comanescu, Gelu.

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Heterostructures interface effects on the far-infrared magneto-optical spectra of indium arsenide/gallium antimonide quantum wells.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Heterostructures interface effects on the far-infrared magneto-optical spectra of indium arsenide/gallium antimonide quantum wells./
Author:	Comanescu, Gelu.
Description:	207 p.
Notes:	Source: Dissertation Abstracts International, Volume: 63-12, Section: B, page: 5901.
Contained By:	Dissertation Abstracts International63-12B.
Subject:	Physics, Condensed Matter. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoeng/servlet/advanced?query=3076473
ISBN:	0493968261

Heterostructures interface effects on the far-infrared magneto-optical spectra of indium arsenide/gallium antimonide quantum wells.
Comanescu, Gelu.

Heterostructures interface effects on the far-infrared magneto-optical spectra of indium arsenide/gallium antimonide quantum wells. - 207 p.

Source: Dissertation Abstracts International, Volume: 63-12, Section: B, page: 5901.

Thesis (Ph.D.)--State University of New York at Buffalo, 2003.

Heterostructures based on InAs/GaSb have been of considerable interest because of their type-II broken-gap band alignment. This gives rise to interesting and unusual electronic properties, such as spatial separation of electrons and holes and cross-interface coupling between InAs conduction band and GaSb valence band. A large range of unique devices have been conceived based on these special properties, e.g., infrared detectors and lasers, resonant interband tunneling diodes (RITDs), and high electron mobility transistors (HEMT). An additional flexibility in engineering these structures comes from the fact that at the InAs/GaSb heterojunction there are two types of interface that can be formed, either Ga-As bonds or In-Sb bonds. We performed FIR magneto-transmission experiments to find the way the interface bonding type affects the electronic properties of InAs/GaSb heterostructures. We found that the cross-interface coupling is stronger for the heterojunctions with In-Sb bonds than for the heterojunctions with Ga-As bonds.

ISBN: 0493968261Subjects--Topical Terms:

1018743
Physics, Condensed Matter.

Heterostructures interface effects on the far-infrared magneto-optical spectra of indium arsenide/gallium antimonide quantum wells.
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100 1 $a Comanescu, Gelu. $3 1944601
245 1 0 $a Heterostructures interface effects on the far-infrared magneto-optical spectra of indium arsenide/gallium antimonide quantum wells.
300 $a 207 p.
500 $a Source: Dissertation Abstracts International, Volume: 63-12, Section: B, page: 5901.
500 $a Adviser: Bruce D. McCombe.
502 $a Thesis (Ph.D.)--State University of New York at Buffalo, 2003.
520 $a Heterostructures based on InAs/GaSb have been of considerable interest because of their type-II broken-gap band alignment. This gives rise to interesting and unusual electronic properties, such as spatial separation of electrons and holes and cross-interface coupling between InAs conduction band and GaSb valence band. A large range of unique devices have been conceived based on these special properties, e.g., infrared detectors and lasers, resonant interband tunneling diodes (RITDs), and high electron mobility transistors (HEMT). An additional flexibility in engineering these structures comes from the fact that at the InAs/GaSb heterojunction there are two types of interface that can be formed, either Ga-As bonds or In-Sb bonds. We performed FIR magneto-transmission experiments to find the way the interface bonding type affects the electronic properties of InAs/GaSb heterostructures. We found that the cross-interface coupling is stronger for the heterojunctions with In-Sb bonds than for the heterojunctions with Ga-As bonds.
590 $a School code: 0656.
650 4 $a Physics, Condensed Matter. $3 1018743
650 4 $a Physics, Optics. $3 1018756
650 4 $a Physics, Electricity and Magnetism. $3 1019535
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690 $a 0607
710 2 0 $a State University of New York at Buffalo. $3 1017814
773 0 $t Dissertation Abstracts International $g 63-12B.
790 1 0 $a McCombe, Bruce D., $e advisor
790 $a 0656
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoeng/servlet/advanced?query=3076473