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Time-resolved near-field microscopy ...
~
Smith, Steven James.
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Time-resolved near-field microscopy of gallium arsenide thin films.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Time-resolved near-field microscopy of gallium arsenide thin films./
作者:
Smith, Steven James.
面頁冊數:
117 p.
附註:
Source: Dissertation Abstracts International, Volume: 57-11, Section: B, page: 7024.
Contained By:
Dissertation Abstracts International57-11B.
標題:
Physics, Optics. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoeng/servlet/advanced?query=9712093
ISBN:
0591196212
Time-resolved near-field microscopy of gallium arsenide thin films.
Smith, Steven James.
Time-resolved near-field microscopy of gallium arsenide thin films.
- 117 p.
Source: Dissertation Abstracts International, Volume: 57-11, Section: B, page: 7024.
Thesis (Ph.D.)--University of Michigan, 1996.
This work combines the ultrafast temporal resolution of femtosecond laser spectroscopy with the subwavelength imaging capability of Near-field Scanning Optical Microscopy (NSOM)
ISBN: 0591196212Subjects--Topical Terms:
1018756
Physics, Optics.
Time-resolved near-field microscopy of gallium arsenide thin films.
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Time-resolved near-field microscopy of gallium arsenide thin films.
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117 p.
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Source: Dissertation Abstracts International, Volume: 57-11, Section: B, page: 7024.
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Co-Chairs: T. B. Norris; R. Kopelman.
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Thesis (Ph.D.)--University of Michigan, 1996.
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This work combines the ultrafast temporal resolution of femtosecond laser spectroscopy with the subwavelength imaging capability of Near-field Scanning Optical Microscopy (NSOM)
$\
sp2.
$
By combining these two techniques, we have demonstrated the potential for making highly localized time resolved spectroscopic measurements in GaAs thin films or devices. This thesis provides an introduction to the principles of subwavelength imaging through NSOM, some details of the construction and operation of this instrument, and the results of femtosecond time resolved measurements made with the instrument.
520
$a
The equal pulse correlation technique (EPC)
$\
sp3,
$
was combined with NSOM to achieve femtosecond time resolution. Using a Ti:Sapphire mode locked laser, the time resolution was approximately 80 fs in all the measurements discussed. Compensation for material dispersion in the single mode fiber was achieved by pre-chirping the pulses using a grating pair
$\
sp4.
$
Cross-correlation by upconversion was used to verify the temporal width of the pulses emitted from the NSOM tip. Spatially resolved (spatial resolution
$\
approx
$2
00nm) EPC signals at various time delays on a femtosecond time scale (
$\
approx
$9
0 fs intervals) were recorded in GaAs thin films.
520
$a
In addition to subwavelength spatial resolution in the plane of the sample, the NSOM in combination with EPC shows a very short depth of field (estimated at 200 nm), verified by our measurements in GaAs films. Measurements in GaAs at wavelengths between 800 nm and 840 nm are consistent with the picture that carrier transport plays a role in the transient absorption of a material when using this technique. Measurements in GaAs compared with measurements in LT-GaAs also suggest this. ftn
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School code: 0127.
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http://pqdd.sinica.edu.tw/twdaoeng/servlet/advanced?query=9712093
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