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Optoelectronic properties and phonon...

Liu, Jianlin.

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Optoelectronic properties and phonon engineering of heteroepitaxial germanium on silicon by molecular beam epitaxy.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Optoelectronic properties and phonon engineering of heteroepitaxial germanium on silicon by molecular beam epitaxy./
Author:	Liu, Jianlin.
Description:	185 p.
Notes:	Source: Dissertation Abstracts International, Volume: 64-06, Section: B, page: 2830.
Contained By:	Dissertation Abstracts International64-06B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3094275

Optoelectronic properties and phonon engineering of heteroepitaxial germanium on silicon by molecular beam epitaxy.
Liu, Jianlin.

Optoelectronic properties and phonon engineering of heteroepitaxial germanium on silicon by molecular beam epitaxy. - 185 p.

Source: Dissertation Abstracts International, Volume: 64-06, Section: B, page: 2830.

Thesis (Ph.D.)--University of California, Los Angeles, 2003.

Ge on Si is a promising candidate for 1.3–1.55μm fiber-optic communication applications, therefore attracting much attention in both academic institutions and semiconductor inductry. First, pure Ge films were grown by using a new relaxed SiGe film growth technique, i.e., Sb surfactant-mediated graded buffer layer growth technique. Compared with conventional growth methods, this method allows us to improve the film quality markedly even though a steep grading rate is used. Pure Ge p-i-n diodes grown by this method exhibit very low dark current of 0.15 mA/cm<super>−2</super> and quantum efficiency as high as 70%.Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Optoelectronic properties and phonon engineering of heteroepitaxial germanium on silicon by molecular beam epitaxy.
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035 $a (UnM)AAI3094275
035 $a AAI3094275
040 $a UnM $c UnM
100 1 $a Liu, Jianlin. $3 1944515
245 1 0 $a Optoelectronic properties and phonon engineering of heteroepitaxial germanium on silicon by molecular beam epitaxy.
300 $a 185 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-06, Section: B, page: 2830.
500 $a Chair: Kang L. Wang.
502 $a Thesis (Ph.D.)--University of California, Los Angeles, 2003.
520 $a Ge on Si is a promising candidate for 1.3–1.55μm fiber-optic communication applications, therefore attracting much attention in both academic institutions and semiconductor inductry. First, pure Ge films were grown by using a new relaxed SiGe film growth technique, i.e., Sb surfactant-mediated graded buffer layer growth technique. Compared with conventional growth methods, this method allows us to improve the film quality markedly even though a steep grading rate is used. Pure Ge p-i-n diodes grown by this method exhibit very low dark current of 0.15 mA/cm<super>−2</super> and quantum efficiency as high as 70%.
520 $a Ge quantum dots by the Stranski-Krastanov growth mode are another important material for Si-based optoelectronics. The basic issues of single-layered and multiple Ge quantum dots on Si were discussed. In particularly, the dot morphology dependence on the superlattice period was investigated, leading to the critical thickness issues of multiple Ge quantum dots.
520 $a Near-infrared properties of Ge quantum dot superlattices was examined. Power dependent, temperature dependent, and dot size dependent photoluminescence of Ge quantum dot superlattices was studied. Room-temperature electroluminescence was observed for Ge quantum dot light emitting diodes. Ge quantum dot p-i-n photodetectors were processed. The diodes exhibit low dark current and high quantum efficiency.
520 $a Mid-infrared absorption in the region of 5–7 μm were observed for both boron-doped and modulation-doped Ge quantum dot superlattices. Normal-incident Ge quantum dot photodetectors were fabricated and photoresponse in the mid-infrared region was investigated. The bound-to-continuum transition is responsible for the observed absorption.
520 $a Phonon process in Ge quantum dot superlattice was examined. Optical phonon frequency was found to change with the strain and atomic intermixing. Acoustic phonon peaks were found in various Ge quantum dot superlattices and these phonons were folded acoustic phonons related to superlattice period. Systematic studies on the thermal conductivity of Ge quantum dot superlattices were performed and the great reduction in thermal conductivity was well explained by the continuum elastic model.
590 $a School code: 0031.
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0544
710 2 0 $a University of California, Los Angeles. $3 626622
773 0 $t Dissertation Abstracts International $g 64-06B.
790 1 0 $a Wang, Kang L., $e advisor
790 $a 0031
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3094275