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Three-dimensional simulation of rapi...

Kisdarjono, Hidayat.

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Three-dimensional simulation of rapid melting and recrystallization of silicin thin films by excimer laser using cellular automata algorithm.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Three-dimensional simulation of rapid melting and recrystallization of silicin thin films by excimer laser using cellular automata algorithm./
作者:	Kisdarjono, Hidayat.
面頁冊數:	97 p.
附註:	Source: Dissertation Abstracts International, Volume: 64-12, Section: B, page: 6278.
Contained By:	Dissertation Abstracts International64-12B.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3116957

Three-dimensional simulation of rapid melting and recrystallization of silicin thin films by excimer laser using cellular automata algorithm.
Kisdarjono, Hidayat.

Three-dimensional simulation of rapid melting and recrystallization of silicin thin films by excimer laser using cellular automata algorithm. - 97 p.

Source: Dissertation Abstracts International, Volume: 64-12, Section: B, page: 6278.

Thesis (Ph.D.)--OGI School of Science & Engineering, 2004.

As flat panel displays shrink in size, thin film transistor (TFT) technology is driven to improve display resolution (i.e. reduce pixel transistor size) and to integrate more functionality (i.e. circuitries) onto the display substrate. Thus, a key TFT process is the fabrication of higher quality silicon active layer on the amorphous display substrate. Excimer-laser-annealing (ELA) is one method by which energy is delivered to melt amorphous silicon films to produce directionally solidified, high quality silicon crystals without causing extensive heating of the substrate.Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Three-dimensional simulation of rapid melting and recrystallization of silicin thin films by excimer laser using cellular automata algorithm.
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100 1 $a Kisdarjono, Hidayat. $3 1943866
245 1 0 $a Three-dimensional simulation of rapid melting and recrystallization of silicin thin films by excimer laser using cellular automata algorithm.
300 $a 97 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-12, Section: B, page: 6278.
500 $a Adviser: Raj Solanki.
502 $a Thesis (Ph.D.)--OGI School of Science & Engineering, 2004.
520 $a As flat panel displays shrink in size, thin film transistor (TFT) technology is driven to improve display resolution (i.e. reduce pixel transistor size) and to integrate more functionality (i.e. circuitries) onto the display substrate. Thus, a key TFT process is the fabrication of higher quality silicon active layer on the amorphous display substrate. Excimer-laser-annealing (ELA) is one method by which energy is delivered to melt amorphous silicon films to produce directionally solidified, high quality silicon crystals without causing extensive heating of the substrate.
520 $a Due to its technological importance, it is desirable to simulate this process in order to fully understand the mechanisms involved and to optimize the conditions leading to desirable microstructure. In this investigation, a model has been developed for the rapid melting and re-crystallization of thin silicon films induced by ELA. The central feature of this model is its ability to simulate lateral growth and random nucleation. The first component of the model is a set of rules for phase change. The second component is a set of functions for computing the latent heat and the displacement of the solid-liquid interface resulting from the phase change. The third component is an algorithm that allows for random nucleation based on classical nucleation theory (CNT). Consequently, the model enables the prediction of lateral growth length (LGL), as well as the calculation of other critical responses of the quenched film such as solid-liquid interface velocity and undercooling.
520 $a To validate the model, thin amorphous Si films with thickness of 30nm, 50nm and 100nm were annealed under various laser fluences to completely melt the films. The resulting LGL were measured using a scanning electron microscope (SEM). Using physical parameters that were consistent with previous studies, the simulated LGL values agree well with the experimental results over a wide range of irradiation conditions. Sensitivity analysis was done to demonstrate the behavior of the model with respect to a select number of model parameters. Our simulations suggest that, for a given fluence, controlling the film's quenching rate is essential for increasing LGL. To this end, the model is an invaluable tool for evaluating and choosing irradiation strategies for increasing lateral growth in laser-crystallized silicon films.
590 $a School code: 1401.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Physics, Condensed Matter. $3 1018743
650 4 $a Physics, Molecular. $3 1018648
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710 2 0 $a OGI School of Science & Engineering. $3 1253275
773 0 $t Dissertation Abstracts International $g 64-12B.
790 1 0 $a Solanki, Raj, $e advisor
790 $a 1401
791 $a Ph.D.
792 $a 2004
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3116957