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Medidas interferometricas del coefic...

Rua de la Asuncion, Armando J.

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Medidas interferometricas del coeficiente piezoelectricos d(33) en peliculas de nitruro de aluminio (Spanish text).

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Medidas interferometricas del coeficiente piezoelectricos d(33) en peliculas de nitruro de aluminio (Spanish text)./
作者:	Rua de la Asuncion, Armando J.
面頁冊數:	64 p.
附註:	Source: Masters Abstracts International, Volume: 43-01, page: 0226.
Contained By:	Masters Abstracts International43-01.
標題:	Physics, Electricity and Magnetism. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1422019
ISBN:	0496267566

Medidas interferometricas del coeficiente piezoelectricos d(33) en peliculas de nitruro de aluminio (Spanish text).
Rua de la Asuncion, Armando J.

Medidas interferometricas del coeficiente piezoelectricos d(33) en peliculas de nitruro de aluminio (Spanish text). - 64 p.

Source: Masters Abstracts International, Volume: 43-01, page: 0226.

Thesis (M.S.)--University of Puerto Rico, Mayaguez (Puerto Rico), 2004.

An interferometer was constructed which is capable of resolving linear displacements of 10-12 meter (0.01A). A feedback loop was introduced to stabilize the system against low frequency fluctuations of mechanical or thermal origin. This interferometric system was tested by measuring the piezoelectric coefficient d11 of quartz (SiO 2). The value obtained was 2.18 pm/v, which is within 3.6% of the accepted value. The same system was utilized for measuring the piezoelectric coefficient d33 of aluminum nitride (AlN) thin films. These were grown by pulsed laser deposition on Si(111) substrates and are 6000 A thick. X ray diffraction studies reveal that the AIN films are polycristaline and have a hexagonal wurzite structure. The crystals are well oriented, with the c direction parallel to the silicon <111> direction. The value measured for d33 was 4.03 pm/v. After correcting for substrate clamping, the coefficient d33 of bulk AlN was found to be 5.7 pm/v, which is very close to values previously reported in the literature.

ISBN: 0496267566Subjects--Topical Terms:

1019535
Physics, Electricity and Magnetism.

Medidas interferometricas del coeficiente piezoelectricos d(33) en peliculas de nitruro de aluminio (Spanish text).
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500 $a Adviser: Felix Fernandez.
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520 $a An interferometer was constructed which is capable of resolving linear displacements of 10-12 meter (0.01A). A feedback loop was introduced to stabilize the system against low frequency fluctuations of mechanical or thermal origin. This interferometric system was tested by measuring the piezoelectric coefficient d11 of quartz (SiO 2). The value obtained was 2.18 pm/v, which is within 3.6% of the accepted value. The same system was utilized for measuring the piezoelectric coefficient d33 of aluminum nitride (AlN) thin films. These were grown by pulsed laser deposition on Si(111) substrates and are 6000 A thick. X ray diffraction studies reveal that the AIN films are polycristaline and have a hexagonal wurzite structure. The crystals are well oriented, with the c direction parallel to the silicon <111> direction. The value measured for d33 was 4.03 pm/v. After correcting for substrate clamping, the coefficient d33 of bulk AlN was found to be 5.7 pm/v, which is very close to values previously reported in the literature.
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