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Optical characterization of gallium ...

Chen, Li.

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Optical characterization of gallium nitride, silicon carbide, and aluminum nitride.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Optical characterization of gallium nitride, silicon carbide, and aluminum nitride./
作者:	Chen, Li.
面頁冊數:	112 p.
附註:	Source: Dissertation Abstracts International, Volume: 66-04, Section: B, page: 2259.
Contained By:	Dissertation Abstracts International66-04B.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3173229
ISBN:	0542107597

Optical characterization of gallium nitride, silicon carbide, and aluminum nitride.
Chen, Li.

Optical characterization of gallium nitride, silicon carbide, and aluminum nitride. - 112 p.

Source: Dissertation Abstracts International, Volume: 66-04, Section: B, page: 2259.

Thesis (Ph.D.)--Arizona State University, 2005.

Optical characterization methods such as photoluminescence (PL), optical reflectance, and Raman spectroscopy are used to study some important material issues in GaN, AlN, and SiC. The behaviors of implanted impurities and defects in GaN are not well understood yet. Therefore, it is potentially highly useful to survey the properties of various dopant species and defects. High purity GaN layers that were ion implanted with a variety of impurities, including Zn, Cd, Ca, N, O, P, and As are investigated. Highly resolved spectra of excitons bound to isoelectronic As or P impurities are obtained with sharp no-phonon lines at 2.952 and 3.200 eV, respectively. Defect-related deep level bands centered at 2.2 and 2.35 eV are studied. Structural defects in GaN have a crucial effect on the performance and operating lives of electronic and optoelectronic devices made from this material. To study structural defect-related PL features, both bulk GaN crystals and epitaxial GaN films are investigated with low temperature PL. Strong correlations are found between the PL features in the range from 3.30 eV to 3.45 eV and the basal plane stacking faults observed by transmission electron microscopy (TEM) in a series of ammonothermally grown bulk GaN crystals. Another correlation is found between PL features near 3.21 eV and folded prismatic stacking faults in the heteroepitaxial material. There is currently controversy about the band-edge excitonic states of AlN because a large Stokes shift exists between reflectance (absorption) and luminescence features. To obtain a better understanding of this issue, we investigate AlN single crystals and heteroepitaxial layers using low temperature optical reflectance and transmission measurements. The A, B, and C excitons are found to have energies of 6.025, 6.243, and 6.257 eV in unstrained material, which shift with strain. The results are compared to a calculation of exciton energies and oscillator strengths to yield a crystal field splitting of -230 meV in unstrained AlN, in good agreement with previous ab initio calculations. Raman spectroscopy and PL are also used to study stacking faults in SiC samples. The PL spectra show different PL transition energies in the epilayer and substrate due to different doping levels, which give rise to differing amounts of band bending in the quantum wells introduced by these faults.

ISBN: 0542107597Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Optical characterization of gallium nitride, silicon carbide, and aluminum nitride.
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300 $a 112 p.
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502 $a Thesis (Ph.D.)--Arizona State University, 2005.
520 $a Optical characterization methods such as photoluminescence (PL), optical reflectance, and Raman spectroscopy are used to study some important material issues in GaN, AlN, and SiC. The behaviors of implanted impurities and defects in GaN are not well understood yet. Therefore, it is potentially highly useful to survey the properties of various dopant species and defects. High purity GaN layers that were ion implanted with a variety of impurities, including Zn, Cd, Ca, N, O, P, and As are investigated. Highly resolved spectra of excitons bound to isoelectronic As or P impurities are obtained with sharp no-phonon lines at 2.952 and 3.200 eV, respectively. Defect-related deep level bands centered at 2.2 and 2.35 eV are studied. Structural defects in GaN have a crucial effect on the performance and operating lives of electronic and optoelectronic devices made from this material. To study structural defect-related PL features, both bulk GaN crystals and epitaxial GaN films are investigated with low temperature PL. Strong correlations are found between the PL features in the range from 3.30 eV to 3.45 eV and the basal plane stacking faults observed by transmission electron microscopy (TEM) in a series of ammonothermally grown bulk GaN crystals. Another correlation is found between PL features near 3.21 eV and folded prismatic stacking faults in the heteroepitaxial material. There is currently controversy about the band-edge excitonic states of AlN because a large Stokes shift exists between reflectance (absorption) and luminescence features. To obtain a better understanding of this issue, we investigate AlN single crystals and heteroepitaxial layers using low temperature optical reflectance and transmission measurements. The A, B, and C excitons are found to have energies of 6.025, 6.243, and 6.257 eV in unstrained material, which shift with strain. The results are compared to a calculation of exciton energies and oscillator strengths to yield a crystal field splitting of -230 meV in unstrained AlN, in good agreement with previous ab initio calculations. Raman spectroscopy and PL are also used to study stacking faults in SiC samples. The PL spectra show different PL transition energies in the epilayer and substrate due to different doping levels, which give rise to differing amounts of band bending in the quantum wells introduced by these faults.
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