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High resistivity III-V antimonide ba...

Pino, Robinson E.

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High resistivity III-V antimonide based compounds: Bulk crystal growth and characterization.

Record Type:	Electronic resources : Monograph/item
Title/Author:	High resistivity III-V antimonide based compounds: Bulk crystal growth and characterization./
Author:	Pino, Robinson E.
Description:	276 p.
Notes:	Source: Dissertation Abstracts International, Volume: 66-04, Section: B, page: 2241.
Contained By:	Dissertation Abstracts International66-04B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3173280
ISBN:	0542106868

High resistivity III-V antimonide based compounds: Bulk crystal growth and characterization.
Pino, Robinson E.

High resistivity III-V antimonide based compounds: Bulk crystal growth and characterization. - 276 p.

Source: Dissertation Abstracts International, Volume: 66-04, Section: B, page: 2241.

Thesis (Ph.D.)--Rensselaer Polytechnic Institute, 2005.

The III-V alloy system AlSb-GaSb-InSb covers an interesting band gap range from approximately 1.6 to 0.17 eV promising for numerous electronic and optoelectronic applications including: light emitters and photodetectors beyond 2 mum wavelength, low power - high speed electronics and high efficiency photovoltaic and thermophotovoltaic cells.

ISBN: 0542106868Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

High resistivity III-V antimonide based compounds: Bulk crystal growth and characterization.
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100 1 $a Pino, Robinson E. $3 1940019
245 1 0 $a High resistivity III-V antimonide based compounds: Bulk crystal growth and characterization.
300 $a 276 p.
500 $a Source: Dissertation Abstracts International, Volume: 66-04, Section: B, page: 2241.
500 $a Adviser: Partha S. Dutta.
502 $a Thesis (Ph.D.)--Rensselaer Polytechnic Institute, 2005.
520 $a The III-V alloy system AlSb-GaSb-InSb covers an interesting band gap range from approximately 1.6 to 0.17 eV promising for numerous electronic and optoelectronic applications including: light emitters and photodetectors beyond 2 mum wavelength, low power - high speed electronics and high efficiency photovoltaic and thermophotovoltaic cells.
520 $a The goal of this work is to study the effects of charge carrier compensation in GaSb, InSb, AlSb, Ga1-xInxSb, and Al1-x InxSb bulk crystals. Forced convection was enforced in the melt during the growth process of 2 inch diameter crystals to achieve higher growth rates and spatial homogeneity. The optical and electrical properties of the grown crystals were evaluated via Fourier transform spectroscopy, UV-Visible-NIR photospectrometer, electron probe micro-analysis, optical microscopy, I-V, Hall effect, and time domain THz emission spectroscopy. The following highlights the major scientific contributions. (1) Heavily compensated GaSb with resistivity as high as 7 x 103 &ohm;-cm, corresponding to net donor concentration of 3.5 x 1013 cm-3 at 77 K have been obtained by tellurium compensation. (2) Ionized impurity scattering has been shown to dominate the room temperature transport properties of heavily compensated GaSb. (3) Enhanced far-IR transmission and lattice vibrations modes (some for the first time) have been observed in tellurium compensated GaSb which coincide with theoretically predicted bands for two-, three-, and four-phonon processes. (4) Undoped InSb substrates grown from indium-rich melts were obtained with superior optical and electrical properties compared to undoped stoichiometric grown InSb. (5) Crystals of AlSb could be easily grown and extracted from silica crucibles without any sticking problem for the first time. (6) The Burstein-Moss shift plays an important role in the optical properties of tellurium compensated Ga1-xInxSb, for x > 0.5 and net donor concentrations in the 1 x 1018 cm-3 range. (7) Unintentionally doped Al1-xInxSb crystals were grown in the 0.16 < x < 0.4 range. It has been determined that the growth rate plays an important role in the spatial homogeneity of the grown alloy. (8) Enhanced emission of terahertz radiation has been observed from impurity compensated GaSb. Both the photo-Dember and surface-field effects are the physical phenomena responsible for the electromagnetic radiation which strongly depends on the material's electrical properties.
590 $a School code: 0185.
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0544
710 2 0 $a Rensselaer Polytechnic Institute. $3 1019062
773 0 $t Dissertation Abstracts International $g 66-04B.
790 1 0 $a Dutta, Partha S., $e advisor
790 $a 0185
791 $a Ph.D.
792 $a 2005
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3173280