東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Photoluminescence spectroscopy of ga...

Yilmaz, Ibrahim.

FindBook

Google Book

Amazon

博客來

Photoluminescence spectroscopy of gallium nitride based materials and light emitting diodes.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Photoluminescence spectroscopy of gallium nitride based materials and light emitting diodes./
作者:	Yilmaz, Ibrahim.
面頁冊數:	122 p.
附註:	Source: Dissertation Abstracts International, Volume: 65-12, Section: B, page: 6447.
Contained By:	Dissertation Abstracts International65-12B.
標題:	Physics, Condensed Matter. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3157075
ISBN:	0496896857

Photoluminescence spectroscopy of gallium nitride based materials and light emitting diodes.
Yilmaz, Ibrahim.

Photoluminescence spectroscopy of gallium nitride based materials and light emitting diodes. - 122 p.

Source: Dissertation Abstracts International, Volume: 65-12, Section: B, page: 6447.

Thesis (Ph.D.)--Rensselaer Polytechnic Institute, 2004.

Our study covers investigation of substrate materials for GaN epitaxy, III-nitride epilayers, multiple quantum wells, and device prototypes to follow the main structural features and peculiarities in dynamics of nonequilibrium carriers, which determine the performance of wide-band-gap III-nitride violet and UV emitters.

ISBN: 0496896857Subjects--Topical Terms:

1018743
Physics, Condensed Matter.

Photoluminescence spectroscopy of gallium nitride based materials and light emitting diodes.
LDR:03256nmm 2200313 4500 001 1852134
005 20051229080339.5
008 130614s2004 eng d
020 $a 0496896857
035 $a (UnM)AAI3157075
035 $a AAI3157075
040 $a UnM $c UnM
100 1 $a Yilmaz, Ibrahim. $3 1940006
245 1 0 $a Photoluminescence spectroscopy of gallium nitride based materials and light emitting diodes.
300 $a 122 p.
500 $a Source: Dissertation Abstracts International, Volume: 65-12, Section: B, page: 6447.
500 $a Adviser: Michael S. Shur.
502 $a Thesis (Ph.D.)--Rensselaer Polytechnic Institute, 2004.
520 $a Our study covers investigation of substrate materials for GaN epitaxy, III-nitride epilayers, multiple quantum wells, and device prototypes to follow the main structural features and peculiarities in dynamics of nonequilibrium carriers, which determine the performance of wide-band-gap III-nitride violet and UV emitters.
520 $a Our results indicate that the long-wavelength EL band peaked at 330 nm has a rise time of 75 ns, which is longer than that of the main narrow band peaked at 285 nm due to band-to-band recombination (less than 10 ns). The quantum efficiency of the light emitting diode (LED) emission can be increased at least by a factor of 10 by reducing the long-wavelength spectral component.
520 $a GaN layers grown on Mace bulk AlN have a higher density of localized states than the layers grown on the Al face. Different effective heights of barriers for transitions to the centers of nonradiative recombination and different slopes in dependence of the PL intensity on the excitation power density show that different kinds of nonradiative recombination centers are involved in the GaN samples grown on Al- and N-face of bulk AlN.
520 $a PL spectroscopy proves high quality of MQW structures consisting of Al 0.5Ga0.5N wells and AlN barrier layers deposited on AlN bulk single crystal substrates. Stimulated emission at 258 nm was demonstrated in these structures. The PL dynamics with increasing temperature and power density of photoexcitation indicates the presence in the quantum wells of a high density of shallow localized states with a narrow energy distribution in AlGaN MQWs grown on bulk AlN substrates. Such localization might prevent the nonequilibrium carriers from reaching centers of nonradiative recombination and, thus, is favorable for the efficient light emission. These results show that AlN is a promising substrate material for solid-state light emitters and detectors in deep UV region.
520 $a LITG technique is demonstrated to be useful for evaluation of ambipolar diffusion coefficient, carrier lifetime and mobility as well as for mapping V-doped wafers. Application of this technique demonstrated big differences of undoped and V-doped 6H-SiC wafers in view of carrier lifetimes (400 +/- 10 ps and 130 +/- 5 ps) and diffusion coefficients (2.7 +/- 0.2 cm2s-1 and 0.9 +/- 0.5 cm2s-1).
590 $a School code: 0185.
650 4 $a Physics, Condensed Matter. $3 1018743
690 $a 0611
710 2 0 $a Rensselaer Polytechnic Institute. $3 1019062
773 0 $t Dissertation Abstracts International $g 65-12B.
790 1 0 $a Shur, Michael S., $e advisor
790 $a 0185
791 $a Ph.D.
792 $a 2004
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3157075