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Study of wet-chemically-prepared hyd...
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Zhou, Hui.
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Study of wet-chemically-prepared hydrogen-terminated silicon (111) surfaces and a novel implementation of a high-resolution interferometer.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Study of wet-chemically-prepared hydrogen-terminated silicon (111) surfaces and a novel implementation of a high-resolution interferometer./
作者:
Zhou, Hui.
面頁冊數:
270 p.
附註:
Source: Dissertation Abstracts International, Volume: 65-02, Section: B, page: 0804.
Contained By:
Dissertation Abstracts International65-02B.
標題:
Physics, Condensed Matter. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3124023
ISBN:
0496713310
Study of wet-chemically-prepared hydrogen-terminated silicon (111) surfaces and a novel implementation of a high-resolution interferometer.
Zhou, Hui.
Study of wet-chemically-prepared hydrogen-terminated silicon (111) surfaces and a novel implementation of a high-resolution interferometer.
- 270 p.
Source: Dissertation Abstracts International, Volume: 65-02, Section: B, page: 0804.
Thesis (Ph.D.)--University of Maryland, College Park, 2004.
This thesis summarizes my graduate study under the National Institute of Standards and Technology (NIST) Atom-Based Dimensional Metrology Project, in which we are developing methods for measuring sub-micrometer dimensions including directly counting atom spacings on a silicon-surface lattice.
ISBN: 0496713310Subjects--Topical Terms:
1018743
Physics, Condensed Matter.
Study of wet-chemically-prepared hydrogen-terminated silicon (111) surfaces and a novel implementation of a high-resolution interferometer.
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Source: Dissertation Abstracts International, Volume: 65-02, Section: B, page: 0804.
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Advisers: Ellen D. Williams; Richard M. Silver.
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Thesis (Ph.D.)--University of Maryland, College Park, 2004.
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This thesis summarizes my graduate study under the National Institute of Standards and Technology (NIST) Atom-Based Dimensional Metrology Project, in which we are developing methods for measuring sub-micrometer dimensions including directly counting atom spacings on a silicon-surface lattice.
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Atomically flat, hydrogen-terminated Si(111) surfaces are prepared using wet chemistry. The surface morphology after the wet-chemistry preparation was found to be dependent on both the initial etching time and wafer miscut. These two factors have been neglected in literature. To produce a morphology of uniform, long-range steps and terraces, the miscut angle has to be larger than a certain angle. The development and dynamics of the surface morphology was explained by preferential etching. A kinetic Monte-Carlo simulation was used to quantitatively study some of the key aspects of the surface-morphology evolution, such as step flow, pit expansion, and step-pit collision.
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The hydrogen-terminated silicon surfaces prepared using wet-chemical etching method were used as substrates to create nanometer-scale patterns using a scanning tunneling microscope (STM)-probe-induced surface modification in both ultra-high vacuum (UHV) and low-vacuum environments. Patterns created in UHV have linewidths below 10 nm, while patterns created in low vacuum had a minimum linewidth of nominally 20 nm. The pattern created in a low vacuum environment was further processed using SF6 reactive-ion etching, resulting in patterns whose aspect ratio had increased more than 5 times.
520
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To enable accurate measurement of atom spacings, a Michelson interferometer of novel design was implemented in this research, based on the principle that during operation, the interference-fringe signal is locked at a zero point by tuning the laser frequency, thus transferring the displacement measurement into a laser-frequency measurement and greatly increasing the measurement resolution. The interferometer is designed to be integrated into an ultra-high-vacuum scanning tunneling microscope for atom-resolved measurements. This unique implementation achieves a nominal resolution of sub-angstrom. In this thesis, the principles of the interferometer design and the uncertainty budget of the interferometer are discussed.
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