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Fabrication and characterization of ...

Lin, Yen-Yi.

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Fabrication and characterization of pentacene-based thin film transistors.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Fabrication and characterization of pentacene-based thin film transistors./
作者:	Lin, Yen-Yi.
面頁冊數:	121 p.
附註:	Source: Dissertation Abstracts International, Volume: 59-08, Section: B, page: 4336.
Contained By:	Dissertation Abstracts International59-08B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9901069
ISBN:	0591979454

Fabrication and characterization of pentacene-based thin film transistors.
Lin, Yen-Yi.

Fabrication and characterization of pentacene-based thin film transistors. - 121 p.

Source: Dissertation Abstracts International, Volume: 59-08, Section: B, page: 4336.

Thesis (Ph.D.)--The Pennsylvania State University, 1998.

Organic thin film transistors are of interests for flat panel display applications. They offer advantages of simple process like spin-casting, or printing-like low cost process for large area electronic applications. Organic thin film transistors using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active electronic material have shown mobility as large as 0.7 cm

ISBN: 0591979454Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Fabrication and characterization of pentacene-based thin film transistors.
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245 1 0 $a Fabrication and characterization of pentacene-based thin film transistors.
300 $a 121 p.
500 $a Source: Dissertation Abstracts International, Volume: 59-08, Section: B, page: 4336.
500 $a Adviser: Tom Jackson.
502 $a Thesis (Ph.D.)--The Pennsylvania State University, 1998.
520 $a Organic thin film transistors are of interests for flat panel display applications. They offer advantages of simple process like spin-casting, or printing-like low cost process for large area electronic applications. Organic thin film transistors using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active electronic material have shown mobility as large as 0.7 cm $\ sp2 $/ V-s and on/off current ratio larger than 10 $\ sp8 $; both values are comparable to hydrogenated amorphous silicon devices. On the other hand, these, and most other organic TFTs, have an undesirably large threshold voltage and subthreshold slope. We show that the large threshold voltage and subthreshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with threshold voltage and subthreshold slope similar to amorphous silicon devices are possible. Interface properties between organic semiconducting layer and gate dielectric layer are very important in determining the threshold voltage and subthreshold voltage characteristics. By changing the different dielectric, such as PMMA, polyimide, organic TFTs have a negative threshold voltage. By changing the surface energy of silicon dioxide surface by coating SiO $\ sb2 $ surface with OTS, mobility as large as 1.5 cm $\ sp2 $/ V-sec, threshold voltage $- $8 V and subthreshold slope of 1.6 V/decade are obtained.
590 $a School code: 0176.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Chemistry, Organic. $3 516206
650 4 $a Chemistry, Polymer. $3 1018428
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