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Studying plasma-surface interactions.

Agarwal, Sumit.

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Studying plasma-surface interactions.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Studying plasma-surface interactions./
作者:	Agarwal, Sumit.
面頁冊數:	205 p.
附註:	Source: Dissertation Abstracts International, Volume: 65-06, Section: B, page: 3030.
Contained By:	Dissertation Abstracts International65-06B.
標題:	Engineering, Chemical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3136869
ISBN:	0496840657

Studying plasma-surface interactions.
Agarwal, Sumit.

Studying plasma-surface interactions. - 205 p.

Source: Dissertation Abstracts International, Volume: 65-06, Section: B, page: 3030.

Thesis (Ph.D.)--University of California, Santa Barbara, 2004.

Low-pressure plasmas are widely used in several processing steps in the integrated circuit (IC) industry for removal, deposition, doping, or modification of thin-films of materials such as metals, insulators, and elemental and compound semiconductors. The focus of this work was to apply various in situ gas-phase and surface diagnostics in a plasma environment to understand the fundamental surface reaction mechanisms in the deposition of technologically important materials such as hydrogenated amorphous silicon (a-Si:H), nonocrystalline silicon (nc-Si), SiO2, Si3N4, and GaN. To this end, in situ attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and line-of-sight threshold ionization mass spectrometry (LOS-TIMS) were implemented to detect and measure both surface adsorbates and gas-phase radicals.

ISBN: 0496840657Subjects--Topical Terms:

1018531
Engineering, Chemical.

Studying plasma-surface interactions.
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245 1 0 $a Studying plasma-surface interactions.
300 $a 205 p.
500 $a Source: Dissertation Abstracts International, Volume: 65-06, Section: B, page: 3030.
500 $a Chairs: Eray S. Aydil; Dimitrios Maroudas.
502 $a Thesis (Ph.D.)--University of California, Santa Barbara, 2004.
520 $a Low-pressure plasmas are widely used in several processing steps in the integrated circuit (IC) industry for removal, deposition, doping, or modification of thin-films of materials such as metals, insulators, and elemental and compound semiconductors. The focus of this work was to apply various in situ gas-phase and surface diagnostics in a plasma environment to understand the fundamental surface reaction mechanisms in the deposition of technologically important materials such as hydrogenated amorphous silicon (a-Si:H), nonocrystalline silicon (nc-Si), SiO2, Si3N4, and GaN. To this end, in situ attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and line-of-sight threshold ionization mass spectrometry (LOS-TIMS) were implemented to detect and measure both surface adsorbates and gas-phase radicals.
520 $a Radical-surface interactions were studied in the deposition of a-Si:H(D) films from SiH4 (SiD4) containing plasmas using surface-sensitive ATR-FTIR spectroscopy. The majority radical species in an SiH4 plasma impinging on the substrate surface during deposition are H and SiH3. We have determined the various reactions of D and SiH3 with a-Si:H(D) surfaces. Isotope substitution techniques were used to observe the interaction of H (D) in the film with D (H) brought to the surface by the radicals. During a-Si:H deposition, surface H is removed by abstraction through the Eley-Rideal mechanism. Silicon is incorporated into the growing film through SiH 3 adsorption onto surface dangling bonds and through radical insertion into surface Si-Si bonds. The H-induced crystallization of a-Si:H films during their post-deposition treatment by an H2 plasma is also addressed. Hydrogen atoms diffuse into the a-Si:H film and insert into strained Si-Si bonds to form intermediate bond-centered H (Si-H-Si) configurations mediating the structural relaxation of the amorphous Si matrix leading to the disorder-to-order transition. The existence of bond-centered H (D) in a-Si:H films exposed to H (D) atoms and in as-deposited films was verified experimentally through IR spectroscopy.
520 $a A state-of-the-art modulated-beam LOS-TIMS apparatus was designed and implemented and absolute densities of radicals, excited molecular species, and the neutral-gas temperature were measured in O2-Ar and N 2 plasmas. In these measurements, various sources of error were considered and the consequences of ignoring them were also discussed. Mass-resolved ion-energy distribution (IED) measurements were conducted in an H2-Ar plasma. The measurements showed that the IEDs has a fine structure, which has not been observed previously. A preliminary interpretation for the fine structure that is observed in these IEDs is also presented.
590 $a School code: 0035.
650 4 $a Engineering, Chemical. $3 1018531
690 $a 0542
710 2 0 $a University of California, Santa Barbara. $3 1017586
773 0 $t Dissertation Abstracts International $g 65-06B.
790 1 0 $a Aydil, Eray S., $e advisor
790 1 0 $a Maroudas, Dimitrios, $e advisor
790 $a 0035
791 $a Ph.D.
792 $a 2004
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3136869