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Molecular beam epitaxy of semiconduc...

Ku, Keh-Chiang.

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Molecular beam epitaxy of semiconductor heterostructures for spintronics.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Molecular beam epitaxy of semiconductor heterostructures for spintronics./
作者:	Ku, Keh-Chiang.
面頁冊數:	181 p.
附註:	Source: Dissertation Abstracts International, Volume: 65-07, Section: B, page: 3509.
Contained By:	Dissertation Abstracts International65-07B.
標題:	Physics, Condensed Matter. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3141007
ISBN:	0496881434

Molecular beam epitaxy of semiconductor heterostructures for spintronics.
Ku, Keh-Chiang.

Molecular beam epitaxy of semiconductor heterostructures for spintronics. - 181 p.

Source: Dissertation Abstracts International, Volume: 65-07, Section: B, page: 3509.

Thesis (Ph.D.)--The Pennsylvania State University, 2004.

In this dissertation, we use molecular beam epitaxy to engineer a variety of materials of relevance to the emerging research field known as semiconductor spintronics. The broad aim of this research is to establish a fundamental framework that exploits electronic spin states in semiconductors for the manipulation, transfer, detection and storage of information.

ISBN: 0496881434Subjects--Topical Terms:

1018743
Physics, Condensed Matter.

Molecular beam epitaxy of semiconductor heterostructures for spintronics.
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245 1 0 $a Molecular beam epitaxy of semiconductor heterostructures for spintronics.
300 $a 181 p.
500 $a Source: Dissertation Abstracts International, Volume: 65-07, Section: B, page: 3509.
500 $a Adviser: Nitin Samarth.
502 $a Thesis (Ph.D.)--The Pennsylvania State University, 2004.
520 $a In this dissertation, we use molecular beam epitaxy to engineer a variety of materials of relevance to the emerging research field known as semiconductor spintronics. The broad aim of this research is to establish a fundamental framework that exploits electronic spin states in semiconductors for the manipulation, transfer, detection and storage of information.
520 $a We begin this dissertation by discussing the underlying basis for diluted magnetic semiconductors. We then follow this with a discussion of experimental studies of the crystal growth and physical properties of a "canonical" case: Ga1-xMnxAs. We then highlight an important advance achieved during this dissertation, namely the identification of growth and annealing parameters that result in samples with consistently reproducible Curie temperatures up to 150 K.
520 $a We next consider heterostructures that integrate Ga1- xMnxAs with other materials, including the fabrication of Ga1-xMn xAs on ZnSe(001) using a recrystallized GaAs template. It is found that n-doping of ZnSe using Cl does not affect the ferromagnetism of Ga1-xMnxAs, paving a pathway to potential applications with Ga1- xMnxAs/ZnSe heterostructures. We then demonstrate efficient spin-polarization tunneling between a ferromagnetic metal and a ferromagnetic semiconductor using epitaxial magnetic tunnel junctions composed of a ferromagnetic metal (MnAs) and a ferromagnetic semiconductor (Ga1-xMnxAs) separated by a non-magnetic semiconductor (AlAs).
520 $a Finally we turn our attention to conventional non-magnetic semiconductor heterostructures in which spin polarization is introduced via optical pumping. The effect of different crystallographic orientations on spin relaxation processes in modulation-doped ZnSe quantum wells is examined. We finish this dissertation with a briefly discussion of the future direction of coherent control of electron g-factor using magnetic ZnSe parabolic quantum wells. (Abstract shortened by UMI.)
590 $a School code: 0176.
650 4 $a Physics, Condensed Matter. $3 1018743
650 4 $a Physics, Electricity and Magnetism. $3 1019535
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710 2 0 $a The Pennsylvania State University. $3 699896
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790 1 0 $a Samarth, Nitin, $e advisor
790 $a 0176
791 $a Ph.D.
792 $a 2004
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3141007