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High symmetry as a guide to potentia...

Hoffman, Christopher Bryce.

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High symmetry as a guide to potential thermoelectrics and sodium flux growth of gallium nitride.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	High symmetry as a guide to potential thermoelectrics and sodium flux growth of gallium nitride./
作者:	Hoffman, Christopher Bryce.
面頁冊數:	238 p.
附註:	Source: Dissertation Abstracts International, Volume: 64-12, Section: B, page: 6084.
Contained By:	Dissertation Abstracts International64-12B.
標題:	Chemistry, Inorganic. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3114472
ISBN:	0496619648

High symmetry as a guide to potential thermoelectrics and sodium flux growth of gallium nitride.
Hoffman, Christopher Bryce.

High symmetry as a guide to potential thermoelectrics and sodium flux growth of gallium nitride. - 238 p.

Source: Dissertation Abstracts International, Volume: 64-12, Section: B, page: 6084.

Thesis (Ph.D.)--Cornell University, 2004.

Two independent research areas, thermoelectric materials synthesis and GaN crystal growth, are explored. First, the search for a material with improved thermoelectric properties is detailed. Novel materials as well as previously reported materia

ISBN: 0496619648Subjects--Topical Terms:

517253
Chemistry, Inorganic.

High symmetry as a guide to potential thermoelectrics and sodium flux growth of gallium nitride.
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300 $a 238 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-12, Section: B, page: 6084.
500 $a Adviser: Francis J. DiSalvo.
502 $a Thesis (Ph.D.)--Cornell University, 2004.
520 $a Two independent research areas, thermoelectric materials synthesis and GaN crystal growth, are explored. First, the search for a material with improved thermoelectric properties is detailed. Novel materials as well as previously reported materia
520 $a The second topic explored is the growth of single crystals of the wide bandgap semiconductor GaN using the Na flux method. The design and construction of a new high-pressure furnace and several other pieces of apparatus are described. In additio
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