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Electrochemical behavior of boron-do...

Vinokur, Natalia.

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Electrochemical behavior of boron-doped diamond electrodes.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Electrochemical behavior of boron-doped diamond electrodes./
作者:	Vinokur, Natalia.
面頁冊數:	190 p.
附註:	Source: Dissertation Abstracts International, Volume: 60-03, Section: B, page: 1106.
Contained By:	Dissertation Abstracts International60-03B.
標題:	Chemistry, Physical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9922521
ISBN:	0599220198

Electrochemical behavior of boron-doped diamond electrodes.
Vinokur, Natalia.

Electrochemical behavior of boron-doped diamond electrodes. - 190 p.

Source: Dissertation Abstracts International, Volume: 60-03, Section: B, page: 1106.

Thesis (Ph.D.)--Case Western Reserve University, 1999.

The electrochemical behavior of boron-doped diamond electrodes was studied in different aqueous solutions with the following conclusions: (1) The rates of simple one-electron outer sphere reactions over a range of formal potentials of more than 1.5V, investigated on B-doped diamond electrodes with doping levels ranging from 7 to 10000 ppm. B in the gas phase, are dependent on the formal potential of the couple and electrode doping. The position of the B-doped diamond Fermi level is consistent with the trends in experimental kinetics data. (2) Complex reactions involving multiple electron transfer and/or an adsorption steps, such as oxygen, hydrogen, and halogen evolution, are shown to be very slow on B-doped diamond. These observations correlate with a very inert hydrogen-terminated B-doped diamond surface. (3) Graphitization of the surface can play an important role in increasing the rates of complex reactions by providing active sites for electron transfer or nucleation on an otherwise inert diamond surface. This contamination can be easily removed by electrochemical anodic etching in dilute HClO4. (4) The resistance of B-doped diamond thin films depends on boron doping. Linear current-voltage characteristics are shown for highly doped polycrystalline films (>1000 ppm B), nonlinear ones for lower doped films. At low doping, films acquire varistor characteristics. This phenomenon is explained by the double Schottky barrier existing at grain boundaries. In order to separate the nonlinear resistance contribution to measured overpotentials from that ascribable to slow electron transfer, methods such as current interruption and isosurface concentration voltammetry were used within limits. (5) In silver and mercury electrodeposition, no underpotential. deposition or alloy formation are found. Models of instantaneous and progressive nucleation are variously employed to describe the systems. The nucleation mechanism is found to be dependent on nucleation overpotential.

ISBN: 0599220198Subjects--Topical Terms:

560527
Chemistry, Physical.

Electrochemical behavior of boron-doped diamond electrodes.
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520 $a The electrochemical behavior of boron-doped diamond electrodes was studied in different aqueous solutions with the following conclusions: (1) The rates of simple one-electron outer sphere reactions over a range of formal potentials of more than 1.5V, investigated on B-doped diamond electrodes with doping levels ranging from 7 to 10000 ppm. B in the gas phase, are dependent on the formal potential of the couple and electrode doping. The position of the B-doped diamond Fermi level is consistent with the trends in experimental kinetics data. (2) Complex reactions involving multiple electron transfer and/or an adsorption steps, such as oxygen, hydrogen, and halogen evolution, are shown to be very slow on B-doped diamond. These observations correlate with a very inert hydrogen-terminated B-doped diamond surface. (3) Graphitization of the surface can play an important role in increasing the rates of complex reactions by providing active sites for electron transfer or nucleation on an otherwise inert diamond surface. This contamination can be easily removed by electrochemical anodic etching in dilute HClO4. (4) The resistance of B-doped diamond thin films depends on boron doping. Linear current-voltage characteristics are shown for highly doped polycrystalline films (>1000 ppm B), nonlinear ones for lower doped films. At low doping, films acquire varistor characteristics. This phenomenon is explained by the double Schottky barrier existing at grain boundaries. In order to separate the nonlinear resistance contribution to measured overpotentials from that ascribable to slow electron transfer, methods such as current interruption and isosurface concentration voltammetry were used within limits. (5) In silver and mercury electrodeposition, no underpotential. deposition or alloy formation are found. Models of instantaneous and progressive nucleation are variously employed to describe the systems. The nucleation mechanism is found to be dependent on nucleation overpotential.
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