東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Growth and characterization of high ...

Patel, Zubin P.

FindBook

Google Book

Amazon

博客來

Growth and characterization of high dielectric constant material for nanoscale device applications.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Growth and characterization of high dielectric constant material for nanoscale device applications./
作者:	Patel, Zubin P.
面頁冊數:	173 p.
附註:	Source: Dissertation Abstracts International, Volume: 65-05, Section: B, page: 2449.
Contained By:	Dissertation Abstracts International65-05B.
標題:	Physics, General. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3132848
ISBN:	0496800886

Growth and characterization of high dielectric constant material for nanoscale device applications.
Patel, Zubin P.

Growth and characterization of high dielectric constant material for nanoscale device applications. - 173 p.

Source: Dissertation Abstracts International, Volume: 65-05, Section: B, page: 2449.

Thesis (Ph.D.)--State University of New York at Albany, 2004.

The need for nanoscale devices to perform at greater speed is the key element driving the scaling down of devices. Silicon dioxide has been the material choice as dielectric for more than 30 years. Decreasing the dielectric thickness of silicon dioxide is reaching several fundamental limitations. This is causing a concern to the use of silicon dioxide as a dielectric material. The search for a new high-dielectric material within the required time frame has been proven challenging. This puts increasing demands on integrated chip technology requiring exploration of novel materials, deposition techniques and characterization methods.

ISBN: 0496800886Subjects--Topical Terms:

1018488
Physics, General.

Growth and characterization of high dielectric constant material for nanoscale device applications.
LDR:03271nmm 2200325 4500 001 1838448
005 20050526083755.5
008 130614s2004 eng d
020 $a 0496800886
035 $a (UnM)AAI3132848
035 $a AAI3132848
040 $a UnM $c UnM
100 1 $a Patel, Zubin P. $3 1926866
245 1 0 $a Growth and characterization of high dielectric constant material for nanoscale device applications.
300 $a 173 p.
500 $a Source: Dissertation Abstracts International, Volume: 65-05, Section: B, page: 2449.
500 $a Adviser: Hassaram Bakhru.
502 $a Thesis (Ph.D.)--State University of New York at Albany, 2004.
520 $a The need for nanoscale devices to perform at greater speed is the key element driving the scaling down of devices. Silicon dioxide has been the material choice as dielectric for more than 30 years. Decreasing the dielectric thickness of silicon dioxide is reaching several fundamental limitations. This is causing a concern to the use of silicon dioxide as a dielectric material. The search for a new high-dielectric material within the required time frame has been proven challenging. This puts increasing demands on integrated chip technology requiring exploration of novel materials, deposition techniques and characterization methods.
520 $a This work done is divided into two phases, (1) Development and optimization of tantalum oxide film for nanoscale device applications. (2) Establishing and verifying the detection limits of non-Rutherford elastic back scattering for the quantification of trace amount of carbon in thin films.
520 $a In the first phase, this thesis focuses on process development and optimization of low pressure chemical vapor deposition process for tantalum oxide films grown on silicon. Optimization was focused on obtaining desired stoichiometry, maximizing the film density and minimizing impurities such as carbon and hydrogen in thin films. The discussion includes the effect of the annealing ambient environments in reducing the carbon and hydrogen content and the resulting effect on the electrical properties.
520 $a For quantification of carbon as trace impurity or a dopant within a high Z material matrix, the second phase of the thesis focuses on establishing and verifying the detection limits of non-Rutherford elastic backscattering. Compared to conventional sputtering techniques this technique is capable of providing trace carbon concentration information at various depths, nondestructively.
520 $a Previous published works on this non-Rutherford response have not identified the minimum detection levels. With an interest in low concentrations of carbon, we undertook to define the limits of detection for this technique. The potential of the method is illustrated by determining changes in trace carbon content in MOCVD (Metal Organic CVD) grown Ta2O5 due to different annealing ambient. The results are coupled with electrical data to co-relate the findings.
590 $a School code: 0668.
650 4 $a Physics, General. $3 1018488
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0605
690 $a 0794
710 2 0 $a State University of New York at Albany. $3 769258
773 0 $t Dissertation Abstracts International $g 65-05B.
790 1 0 $a Bakhru, Hassaram, $e advisor
790 $a 0668
791 $a Ph.D.
792 $a 2004
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3132848