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Infrared focal plane array based on ...

Jiang, Jutao.

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Infrared focal plane array based on gallium indium arsenideGaInAs/InP quantum well infrared photodetectors.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Infrared focal plane array based on gallium indium arsenideGaInAs/InP quantum well infrared photodetectors./
作者:	Jiang, Jutao.
面頁冊數:	225 p.
附註:	Source: Dissertation Abstracts International, Volume: 65-05, Section: B, page: 2546.
Contained By:	Dissertation Abstracts International65-05B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3132546
ISBN:	0496797866

Infrared focal plane array based on gallium indium arsenideGaInAs/InP quantum well infrared photodetectors.
Jiang, Jutao.

Infrared focal plane array based on gallium indium arsenideGaInAs/InP quantum well infrared photodetectors. - 225 p.

Source: Dissertation Abstracts International, Volume: 65-05, Section: B, page: 2546.

Thesis (Ph.D.)--Northwestern University, 2004.

There are many military and commercial applications for Infrared (IR) focal plane arrays (FPAs). Today, most IR FPAs are made with intrinsic HgCdTe (MCT) photodetectors. IR photodetectors based on intersubband-transition mechanism, such as quantum well infrared photodetectors (QWIPs), possess many advantages by comparing with MCTs. The goal of this research is to develop IR FPAs based on these novel QWIPS.

ISBN: 0496797866Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Infrared focal plane array based on gallium indium arsenideGaInAs/InP quantum well infrared photodetectors.
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245 1 0 $a Infrared focal plane array based on gallium indium arsenideGaInAs/InP quantum well infrared photodetectors.
300 $a 225 p.
500 $a Source: Dissertation Abstracts International, Volume: 65-05, Section: B, page: 2546.
500 $a Adviser: Manijeh Razeghi.
502 $a Thesis (Ph.D.)--Northwestern University, 2004.
520 $a There are many military and commercial applications for Infrared (IR) focal plane arrays (FPAs). Today, most IR FPAs are made with intrinsic HgCdTe (MCT) photodetectors. IR photodetectors based on intersubband-transition mechanism, such as quantum well infrared photodetectors (QWIPs), possess many advantages by comparing with MCTs. The goal of this research is to develop IR FPAs based on these novel QWIPS.
520 $a First, the relevant theoretical basis for intersubband n-type QWIP and infrared imaging array will be presented. Next, the material growth and characterization using low-pressure metalorganic chemical vapor deposition technique will be discussed in detail. Developing a FPA fabrication process is the most important part of this work and it will be given in detail. The important technologies and equipment involved in the fabrication process will also be described. The FPA sample is bonded to a 256 x 256 Litton readout integrated circuit chip for testing. Important aspects related to the Litton chip will also be discussed. Finally, the infrared FPA testing and results will be described in detail.
520 $a Additionally, to prepare for our long-term goal---monolithic integration of focal plane array with Silicon based readout circuit, the growth technique of QWIP on Si substrate is also studied in this work.
520 $a The culmination of this work includes many "best" and "first" reported results: a record high detectivity of QWIP grown on Si substrate and the first reported long-wavelength IR FPA based on Al-free corrugated InGaAs/InP QWIPs.
590 $a School code: 0163.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Physics, General. $3 1018488
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710 2 0 $a Northwestern University. $3 1018161
773 0 $t Dissertation Abstracts International $g 65-05B.
790 1 0 $a Razeghi, Manijeh, $e advisor
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791 $a Ph.D.
792 $a 2004
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