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Ohmic contacts to p-type gallium nit...

Liu, Bo.

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Ohmic contacts to p-type gallium nitride.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Ohmic contacts to p-type gallium nitride./
作者:	Liu, Bo.
面頁冊數:	177 p.
附註:	Source: Dissertation Abstracts International, Volume: 62-04, Section: B, page: 2014.
Contained By:	Dissertation Abstracts International62-04B.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3009932
ISBN:	0493199500

Ohmic contacts to p-type gallium nitride.
Liu, Bo.

Ohmic contacts to p-type gallium nitride. - 177 p.

Source: Dissertation Abstracts International, Volume: 62-04, Section: B, page: 2014.

Thesis (Ph.D.)--University of Florida, 2000.

The effects of H2O2 treatment, multi-layer metallization, and Ni cap-layer on Ni/Au have been studied for ohmic contacts to p-GaN. First, surface H2O2 treatments are found to increase the hole concentration by up to 100% in p-GaN grown by molecular beam epitaxy (MBE), while causing no change in n-GaN or p-GaN grown by metalorganic chemical vapor deposition (MOCVD). Treatment of 20 min increased, while treatment >60 min decreased the hole concentration in MBE p-GaN. With this treatment, the current in Ni/Au contacts increased. The increased hole concentration was attributed to reduction of nitrogen vacancies or H-Mg complexes in GaN. The decrease of carrier concentration was attributed to recompensation of shallow acceptors by oxygen serving as hole traps.

ISBN: 0493199500Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Ohmic contacts to p-type gallium nitride.
LDR:02886nmm 2200301 4500 001 1838119
005 20050509102116.5
008 130614s2000 eng d
020 $a 0493199500
035 $a (UnM)AAI3009932
035 $a AAI3009932
040 $a UnM $c UnM
100 1 $a Liu, Bo. $3 1531136
245 1 0 $a Ohmic contacts to p-type gallium nitride.
300 $a 177 p.
500 $a Source: Dissertation Abstracts International, Volume: 62-04, Section: B, page: 2014.
500 $a Chairman: Paul H. Holloway.
502 $a Thesis (Ph.D.)--University of Florida, 2000.
520 $a The effects of H2O2 treatment, multi-layer metallization, and Ni cap-layer on Ni/Au have been studied for ohmic contacts to p-GaN. First, surface H2O2 treatments are found to increase the hole concentration by up to 100% in p-GaN grown by molecular beam epitaxy (MBE), while causing no change in n-GaN or p-GaN grown by metalorganic chemical vapor deposition (MOCVD). Treatment of 20 min increased, while treatment >60 min decreased the hole concentration in MBE p-GaN. With this treatment, the current in Ni/Au contacts increased. The increased hole concentration was attributed to reduction of nitrogen vacancies or H-Mg complexes in GaN. The decrease of carrier concentration was attributed to recompensation of shallow acceptors by oxygen serving as hole traps.
520 $a Second, general principles were defined for selecting metals for ohmic contacts to GaN, a scheme called "NOG" for Nitride-forming metal Over Gallide-forming metal. In "NOG" a gallide-forming metal dissociates GaN and a nitride-forming metal increases the nitrogen thermodynamic activity at the interface. Literature data were compared to these ideas, and experimental data on Ni/Ti/Au, Ni/Al/Au, Pt/Si/Pt/Au, Pt/Mg/Pt/Au were collected and compared with data from Ni/Au and Pt/Au contacts. Higher currents were found for schemes based on the "NOG" principles. However, the contact resistivity was still high and thermal stability became a limiting factor.
520 $a Last, ohmic contacts to p-GaN were obtained after oxidizing Ni/Au and Ni/Au/Ni contacts. Both Ni/Au/Ni and Ni/Au were shown to have resistivities of &sim;10-4 O-cm2. Transparent NiO was obtained and thin Au film formed pores which led to optical transparencies at lambda = 450nm of >85%. The porosity in Au was demonstrated to result from interface and grain boundary energies. Addition of the Ni cap-layer was shown to increase the thermal stability of thin Ni/Au ohmic contacts and increase the light transmittance to 93%, while keeping contact resistivities of low 10-4 O-cm2.
590 $a School code: 0070.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0794
690 $a 0544
710 2 0 $a University of Florida. $3 718949
773 0 $t Dissertation Abstracts International $g 62-04B.
790 1 0 $a Holloway, Paul H., $e advisor
790 $a 0070
791 $a Ph.D.
792 $a 2000
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3009932